专利名称：Surface treatment method and surface treatment apparatus 发明人：Kobayashi, Yasuo, Tokyio Electron Limited, Intell. Depmt,Miyatani, Kotaro, Tokyio
Electron Limited, Intell. Depmt,Maekawa,
Kaoru, Tokyio Electron Limited, Intell.
Depmt
申请号：EP08161431.5
申请日：19991111
公开号：EP1983565A2
公开日：
20081022
摘要：A subject (W) which is to be treated and on which an oxide film is formed, is carried into a treatment vessel (10), and the treatment vessel is maintained under vacuum. A mixture gas of N2 gas and H2 gas is introduced into a plasma generation section (30), plasma is generated, and activated gas species of the N2 and H2 gases are formed. The activated gas species are caused to flow toward the subject, and an NF3 gas is added to the activated gas species and activated to generate an activated gas of N2, H2 and NF3 gases. The subject (W) is cooled to not higher than a predetermined temperature by a cooling means and reacted with the activated gas of NF3 gas. The oxide film is thus degenerated into a reactive film. When the supply of N2, H2 and NF3 gases into the treatment vessel (10) is stopped, the subject is heated up to a predetermined temperature by a heating means, and the reactive film is sublimated and eliminated. Thus, a surface treatment method for removing the oxide film from the subject and a surface treatment apparatus for doing the same are disclosed. Furthermore, the surface treatment apparatus and other treatment apparatuses constitute a cluster system
capable of carrying the subject in an unreactive atmosphere.
申请人：Tokyo Electron Limited
地址：3-6, Akasaka 5-chome Minato-ku Tokyo 107-8481 JP 国籍：JP
代理机构：HOFFMANN EITLE
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