Vishay Siliconix
Si1902DL
Dual N-Channel 20-V (D-S) MOSFET
投注差FEATURES
•TrenchFET ® Power MOSFETS: 2.5 V Rated
PRODUCT SUMMARY
V DS (V)r DS(on) (Ω)I D (A)20
0.385 at V GS = 4.5 V 0.700.630 at V GS = 2.5 V
0.54
M a rk in g C o d e P A X X
L o t T
Y Y
SOT-363
SC-70 (6-LEADS)
6
4
1
2
35
Top View
S 1
杜惠恺
G 1
D 2
D 1
G 2
S 2
Y Part # Code
女奴
Marking Code
A Lot T raceability and Date Code
Ordering Information:Si1902DL-T1 (with Tape and Reel)
Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol 5 secs
Steady State
Unit Drain-Source Voltage V DS 20V
Gate-Source Voltage
V GS ±12
Continuous Drain Current (T J = 150 °C)a T A = 25 °C I
D 0.700.66A
T A = 85 °C
0.50
0.48alp
Pulsed Drain Current
I DM 1.0
Continuous Source Current (Diode Conduction)a I S 0.250.23Maximum Power Dissipation a
T A = 25 °C P D 0.300.27W T A = 85 °C 0.16
0.14
Operating Junction and Storage Temperature Range
T J , T stg
-
55 to 150°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient a t ≤ 5 sec R thJA 360415°C/W
Steady State 400460Maximum Junction-to-Foot (Drain)Steady State
R thJF
300
350
Si1902DL
Vishay Siliconix
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
Vishay Siliconix
Si1902DL
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Surge-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Vishay Siliconix
Si1902DL
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix
Si1902DL
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay/ppg?71080.
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Foot
Disclaimer Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
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95年高考语文第一题No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
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