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January 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
VND5012AK-E
DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS
Rev. 3
Table 1. General Features
■
OUTPUT CURRENT: 40A ■
3.0V CMOS COMPATIBLE INPUT ■ CURRENT SENSE DISABLE
■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE SHUT-DOWN ■ OVERVOLTAGE CLAMP ■ THERMAL SHUT DOWN
■ CURRENT AND POWER LIMITATION ■ VERY LOW STAND-BY CURRENT
■ PROTECTION AGAINST LOSS OF GROUND
AND LOSS OF V CC
■ VERY LOW ELECTROMAGNETIC SUSCEPTIBILITY
财经月历■ OPTIMIZED ELECTROMAGNETIC EMISSION ■ REVERSE BATTERY PROTECTION (**)■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION
The VND5012AK-E is a monolithic device made using STMicroelectronics VIPower technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active V CC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table).
Figure 1. Package
This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio) when CS_DIS is driven low or left open.
When CS_DIS is driven high, the CURRENT SENSE pin is in a high impedance condition.
Output current limitation protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to safe level up to thermal shut-down intervention.Thermal shut-down with automatic restart allows the device to recover normal operation as soon as fault condition disappears.
Table 2. Order Codes
Note:(**) See application schematic at page 8
PowerSSO-24
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VND5012AK-E
VND5012AKTR-E
ADVANCE DATA
VND5012AK-E
Table 3. Pin Function
Name Function
V CC Battery connection
OUTPUT1,2Power output
GND Ground connection. Must be reverse battery protected by an external diode/resistor network INPUT1,2Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state CURRENT SENSE1,2Analog current sense pin, delivers a current proportional to the load current CS_DIS Active high CMOS compatible pin, to disable the current sense pin
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VND5012AK-E
Table 4. Absolute Maximum Ratings
Table 5. Thermal Data
Note: 1.When mounted on a standard single-sided FR4 board with 1cm 2 of Cu (at least 35µm thick) connected to TAB.
Symbol Parameter
Value Unit V CC DC supply voltage 41V -V CC Reverse DC supply voltage -0.3V - I GND DC reverse ground pin current -200mA I OUT DC output current
Internally limited
A - I OUT Reverse DC output current -30A I IN DC input current
-1 to 10mA I CSD DC current sense disable input current -1 to 10mA V CSENSE Current sense maximum voltage
V CC -41+V CC V V V ESD Electrostatic discharge (R=1.5k Ω; C=100pF)2000V T j Junction operating temperature -40 to 150°C T stg
Storage temperature
-55 to 150
韩寒的杂志
°C
Symbol Parameter
Max Value
Unit R thj-case Thermal resistance junction-case 1.7°C/W R thj-amb
Thermal resistance junction-ambient
52 (see note 1)
°C/W
VND5012AK-E
废都性描写ELECTRICAL CHARACTERISTICS (8V<V CC<36V; -40°C<T j<150°C, unless otherwise specified) Table 6. Power Section
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VND5012AK-E
ELECTRICAL CHARACTERISTICS (continued)Table 8. Logic Input
Table 9. Protections and Diagnostics (see note 2)
Note: 2.To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device operates under abnormal conditions this software must limit the duration and number of activation cycles.
Symbol Parameter
Test Conditions
Min.
Typ.
Max.Unit V IL Input low level voltage 0.9
V I IL Low level input current V IN =0.9 V
1µA V IH Input high level voltage 2.1
V I IH High level input current V IN = 2.1 V
10
µA V I(hyst)Input hysteresis voltage 0.25V V ICL Input clamp voltage I IN =1mA I IN =-1mA 5.5
-0.7
TBD
V V V CSDL CS_DIS low level voltage 0.9V I CSDL Low level CS_DIS current V CSD = 0.9V
1µA V CSDH CS_DIS high level voltage 2.1
V I CSDH High level CS_DIS current V CSD = 2.1 V
10
µA V CSD(hyst)CS_DIS hysteresis voltage 0.25V V CSCL
CS_DIS clamp voltage
I CSD =1mA I CSD =-1mA 5.5
-0.7
TBD
V V
Symbol Parameter
Test Conditions
Min.Typ.Max.Unit I limH DC Short circuit current V CC =13V 5V<V CC <36V
40
60
8080
A A I limL Short circuit current during thermal cycling V CC =13V; T R <T j <T TSD
24A T TSD Shutdown temperature 150毛粒子
175
200
°C T R Reset temperature T RS + 1T RS + 5°C T RS Thermal reset of STATUS 135
°C
T HYST Thermal hysteresis (T TSD -T R )
7
°C V DEMAG Turn-off output voltage clamp
I OUT =2A; V IN =0; L=6mH V CC -41V CC -46V CC -52
V V ON
Output voltage drop limitation
I OUT =0.4A
T j = -40°C...+150°C (see fig. 9)25
mV
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