2015上海工博会
摘要
给汶川小朋友的一封信
沉积速率高、基材温升低的磁控溅射工艺,已经成为半导体集成电路金属化工艺的主流。本文重点对在硅晶圆上溅射金属铜薄膜的实际镀膜过程中的淀积速率进行了理论和实验研究。结果表明淀积速率随工作气压的增大先增大后减小;随着温度增大而减小,但均匀性增强;当入射离子的能量超过溅射阈值时,淀积速率随着溅射功率的增加先增加后下降;同时还讨论了溅射功率、淀积时间对膜厚和膜质量的影响。以上结论对于获得良好的镀膜工艺控制是很有意义的。关键词溅射;集成电路金属化;淀积速率影响因素;最佳工艺条件
Magnetron Sputtering Cu film画家罗绮
Abstract
The high deposition rate,substrate temperature rise of low-magnetron sputtering process, h
as become the mainstream of the semiconductor integrated circuit metallization process. This article focuses on theoretical and experimental research in the actual coating process of the sputtering of copper films on silicon wafers in the deposition rate. Studies have shown that the deposition rate first increases with increasing working pressure and then decreases; deposition rate decreases as the temperature increases, but the enhanced uniformity; when the incident ion energy greater than the sputtering threshold, the deposition rate With the sputtering power increased first and then decreased; and sputtering power, deposition time on the film thickness and film quality. The conclusion is very significant to get a good coating process control.
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