Dielectric properties of Bi2Ti2O7 films grown on S

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 期刊名称： Ferroelectrics

幸福双响炮作者： Wang, H.,Shang, S. X.,Yao, W. F.,Hou, Y.,Xu, X. H.,Wang, D.,Wang, M.,Yu, J. Zh.

放射鼠

缓解生猪市场价格周期性波动调控预案年份： 2002年

野兽与乡巴佬期号：第1期

007余温之恋关键词： Bi 2 Ti 2 O 7;Thin Film;Mocvd;(111) Orientation

摘要：The growth of Bi 2 Ti 2 O 7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480550 °C is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi 2 Ti 2 O 7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant ( l ) and loss tangent (tg i ) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/ w m

2 . The resistivity is higher than 1 2 10 12 z . .cm under the applied voltage of 5V. The Bi 2 Ti 2 O 7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

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