CM1621
英文关键词LCD and Camera EMI Filter Array with ESD Protection
Features
•Six Channels of EMI Filtering with Integrated ESD Protection •Pi −Style EMI Filters in a Capacitor −Resistor −Capacitor (C −R −C)Network
•±15 kV ESD Protection on Each Channel (IEC 61000−4−2 Level 4, Contact Discharge)•±30 kV ESD Protection on Each Channel (HBM)•Greater than 40 dB Attenuation (Typical) at 1 GHz •uDFN Package with 0.40 mm Lead Pitch:•12−Lead: 2.50 mm x 1.20 mm x 0.50 mm
•
These Devices are Pb −Free and are RoHS Compliant
Applications
•LCD and Camera Data Lines in Mobile Handsets
•I/O Port Protection for Mobile Handsets, Notebook Computers,PDAs, etc.
•EMI Filtering for Data Ports in Cell Phones, PDAs or Notebook Computers
•Wireless Handsets •
Handheld PCs/PDAs
BLOCK DIAGRAM
FILTER+ESDn*
*See Package/Pinout Diagrams for expanded pin information.
1 of 6 EMI / RFI + ESD Channels
MARKING DIAGRAM
Device
Package Shipping †ORDERING INFORMATION
onsemi
CM1621−06DE
uDFN −12(Pb −Free)
3000/T ape & Reel
UDFN12DE SUFFIX CASE 517AE
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
P21= CM1621−06DE M = Month Code
G
= Pb −Free Package
1P21 M G
PACKAGE / PINOUT DIAGRAMS
Bottom View (Pins Up View)Top View (Pins Down View)12−Lead UDFN Package
Pin 1Marking
14 13 12 11 10 9
1 2 3 4 5 6
Table 1. PIN DESCRIPTIONS
Device Pin(s)
Name Description
Device Pin(s)
Name Description
1FILTER1Filter + ESD Channel 112FILTER1Filter + ESD Channel 12FILTER2Filter + ESD Channel 211FILTER2Filter + ESD Channel 23FILTER3Filter + ESD Channel 310FILTER3Filter + ESD Channel 34FILTER4Filter + ESD Channel 49FILTER4Filter + ESD Channel 45FILTER5Filter + ESD
Channel 58FILTER5Filter + ESD Channel 56FILTER6Filter + ESD Channel 67
FILTER6
Filter + ESD Channel 6
GND PAD
GND
Device Ground
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating Units Storage Temperature Range −65 to +150
°C DC Power per Resistor 100mW DC Package Power Rating
500
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Rating Units Operating Temperature Range
−40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol Parameter Conditions Min Typ Max Units R Resistance85100115W
C TOTAL Total Channel Capacitance At 2.5 VDC Reverse Bias,
1 MHz, 30 mVAC
273441pF
C Capacitance C At 2.5 VDC Reverse Bias,
1 MHz, 30 mVAC
17pF V DIODE Standoff Voltage I DIODE = 10 m A 6.0V I LEAK Diode Leakage Current (reverse bias)V DIODE= +3.3 V100nA V SIG Signal Clamp Voltage I LOAD = 1.0 mA 6.07.08.0V
V ESD In−system ESD Withstand Voltage
a) Human Body Model (HBM), MIL−STD−883,
Method 3015
b) Contact Discharge per IEC 61000−4−2 Level 4(Note 2)
±30
±15
kV
R DYN Dynamic Resistance
Positive
Negative 2.3
0.9
W
f C Cut−off Frequency
Z SOURCE = 50 W, Z LOAD = 50 W Channel R = 100 W,
Channel C = 15 pF
90135
(Note 3)
MHz
A1GHz Absolute Attenuation at 1 GHz from 0 dB Level Z SOURCE = 50 W, Z LOAD = 50 W,
DC Bias = 0 V; (Notes 1 and 3)
−40dB
A800MHz −3GHz Absolute Attenuation at 800 MHz to 3 Ghz
from 0 dB Level
Z SOURCE = 50 W, Z LOAD = 50 W,
对羟基联苯
DC Bias = 0 V; (Notes 1 and 3)高中数学
研究性学习周小青1.T A= 25°C unless otherwise specified.
2.ESD applied to input and output pins with respect to GND, one at a time.
3.Attenuation / RF curves characterized by a network analyzer using microprobes.
PERFORMANCE INFORMATION
Typical Filter Performance (T A = 255C, DC Bias = 0 V, 50 W Environment)
Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1621−06DE)
Typical Diode Capacitance vs. Input Voltage
反论文Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1621−06DE)
Typical Diode Capacitance vs. Input Voltage
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (T A = 255C, DC Bias = 0 V, 50 W Environment)
Figure 3. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1621−06DE)
Typical Diode Capacitance vs. Input Voltage
Figure 4. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1621−06DE)
Typical Diode Capacitance vs. Input Voltage
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