N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV DSS
20V ▼ Low On-resistance R DS(ON)30m Ω▼ Fast Switching
I D
6A P-CH BV DSS
-20V R DS(ON)50m ΩDescription
I D
-5A
Absolute Maximum Ratings
Symbol Parameter
Rating Units
N-channel
P-channel
V DS Drain-Source Voltage -20V V GS
Gate-Source Voltage ±12V I D @T A =25℃Continuous Drain Current 3-5A I D @T A =70℃Continuous Drain Current 3-4A I DM
Pulsed Drain Current 1-20
A P D @T A =25℃Total Power Dissipation 2.0W Linear Derating Factor 0.016W/℃T STG Storage Temperature Range
-55 to 150℃T J
Operating Junction Temperature Range
-55 to 150
℃Symbol Value Unit Rthj-a
Thermal Resistance Junction-ambient 3
Max.
62.5
℃/W
我们相爱6年Data and specifications subject to change without notice
AP4500GM
Pb Free Plating Product
±1220Parameter
200609031
Thermal Data
高中班级宠物女孩小诗204.86The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S1
G1
S2
G2D1
D1
D2
D2
SO-8
N-CH Electrical Characteristics@T j =25o C(unless otherwise specified)
Symbol Parameter
Test Conditions
Min.
Typ.Max.Units BV DSS
Drain-Source Breakdown Voltage V GS =0V, I D =250uA 20--V ΔB V DSS /ΔT j
Breakdown Voltage Temperature Coefficient Reference to 25℃, I D =1mA
-0.037
-V/℃R DS(ON)Static Drain-Source On-Resistance 2
V GS =4.5V, I D =6A --30m ΩV GS =2.5V, I D =5.2A --45m ΩV GS(th)Gate Threshold Voltage V DS
=V GS , I D =250uA 0.5- 1.2V g fs Forward Transconductance
V DS =10V, I D =6A -18.5-S I DSS Drain-Source Leakage Current (T j =25o C)V DS =20V, V GS =0V --1uA Drain-Source Leakage Current (T j =70o C)
V DS =16V, V GS =0V --25uA I GSS Gate-Source Leakage V GS =±12V --nA
Q g Total Gate Charge 2I D =6A -915nC Q gs Gate-Source Charge V DS =10V - 1.8-nC Q gd Gate-Drain ("Miller") Charge V GS =4.5V - 4.2-nC t d(on)Turn-on Delay Time 2V DS =10V -29-ns t r Rise Time
I D =1A
-65-ns t d(off)Turn-off Delay Time R G =6Ω,V GS =4.5V -60-ns t f Fall Time R D =10Ω-50-ns C iss Input Capacitance V GS =0V -300480pF C oss Output Capacitance
V DS =8V -255-pF C rss
Reverse Transfer Capacitance
上海手机充值卡
批发-115
-
pF
Source-Drain Diode
Symbol Parameter
Test Conditions
Min.Typ.Max.Units V SD Forward On Voltage 2I S =1.7A, V GS =0V -- 1.2V t rr Reverse Recovery Time I S =6A, V GS =0V,-26-ns Q rr
Reverse Recovery Charge
dI/dt=100A/µs
-17
AP4500GM
±100
AP4500GM
P-CH Electrical Characteristics@T j =25o
C(unless otherwise specified)
Symbol Parameter
Test Conditions
Min.
Typ.Max.Units BV DSS
Drain-Source Breakdown Voltage
V GS =0V, I D =250uA
-20--V ΔB V DSS /ΔT j
Breakdown Voltage Temperature Coefficient Reference to 25℃, I D =-1mA
--0.037
-V/℃R DS(ON)Static Drain-Source On-Resistance 2V GS =-4.5V, I D =-2.2A
--50m ΩV GS =-2.5V, I D =-1.8A
--90m ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =-250uA -0.5--1V g fs Forward Transconductance
V DS =-10V, I D =-2.2A - 2.5-S I DSS Drain-Source Leakage Current (T j =25o
C)V DS =-20V, V GS =0V ---1uA Drain-Source Leakage Current (T j =70o C)
V DS =-16V, V GS =0V ---25uA I GSS Gate-Source Leakage V GS =--nA
Q g Total Gate Charge 2I D =-5A -1420nC Q gs Gate-Source Charge V DS =-16V -2-nC Q gd Gate-Drain ("Miller") Charge V GS =-4.5V - 5.6-nC t d(on)Turn-on Delay Time 2V DS =-10V -10-ns t r Rise Time
I D =-2.2A
-11-ns t d(off)Turn-off Delay Time R G =6Ω,V GS =-10V -58-ns t f Fall Time R D =4.5Ω-38-ns C iss Input Capacitance V GS =0V -9401500pF
C oss Output Capacitance
V DS =-20V -400-pF C rss
Reverse Transfer Capacitance
f=1.0MHz
-160
-
pF
Source-Drain Diode
Symbol Parameter
Test Conditions
Min.Typ.Max.Units V SD Forward On Voltage
2
I S =-1.8A, V GS =0V ---1.2V t rr Reverse Recovery Time I S =-2.2A, V GS =0V,-25-ns Q rr
Reverse Recovery Charge
dI/dt=100A/µs
-21
-nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
± 12V ±100
N-Channel
Fig 3. On-Resistance v.s. Gate Voltage
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP4500GM
AP4500GM
N-Channel
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
广州塔
模型Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议