Cool MOS™=Power Transistor
Feature
•=New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme d v/d t rated
•=High peak current capability
•=Improved transconductance
•=150 °C operating temperature Product Summary
V DS @ T jmax650V R DS(on)0.38ΩI D11A
P-TO262-3-1P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Maximum Ratings, at T j = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current T C = 25 °C
T C = 100 °C I D
11
7
A
Pulsed drain current, t p limited by T jmax I D puls33
Avalanche energy, single pulse
I D=5.5A, V DD=50V
E AS340mJ
Avalanche energy, repetitive t AR limited by T jmax1)
I D=11A, V DD=50V
E AR0.6
Avalanche current, repetitive t AR limited by T jmax I AR11A Reverse diode d v/d t
I S=11A, V DS<=V DD, d i/d t=100A/µs, T jmax=150°C
d v/d t6V/ns
Gate source voltage static V GS±20V Gate source voltage dynamic V GS±30
Power dissipation, T C = 25°C P tot125W Operating and storage temperature T j , +150°C
Thermal Characteristics
Parameter Symbol Values Unit
Thermal resistance, junction - case R thJC --1K/W Thermal resistance, junction - ambient, leaded R thJA--62
SMD version, device on PCB: @ min. footprint
@ 6 cm2 cooling area 2)R thJA
-
-
-
35
62
-
Linear derating factor--1W/K Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T sold --260°C
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V GS=0V, I D=0.25mA
V(BR)DSS600--V Drain-source avalanche breakdown voltage
V GS=0V, I D=11A
V(BR)DS-700-
Gate threshold voltage, V GS = V DS
I D = 0.5 mA
V GS(th) 2.13 3.9
Zero gate voltage drain current V DS = 600 V, V GS = 0 V, T j = 25 °C V DS = 600 V, V GS = 0 V, T j = 150 °C I DSS
-
-
-
-
25
250
µA
Gate-source leakage current
V GS=20V, V DS=0V
I GSS--100nA
Drain-source on-state resistance V GS=10V, I D=7A, T j=25°C
V GS=10V, I D=7A, T j=150°C R DS(on)
-
-
0.34
1.1
0.38
1.22
Ω
Gate input resistance
f = 1 MHz, open drain
R G-0.86-
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E AR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Electrical Characteristics , at T j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
Transconductance g fs V DS≥2*I D*R DS(on)max ,
I D=7A
-8.3-S
Input capacitance C iss V GS=0V, V DS=25V,
f=1MHz -1460-pF
Output capacitance C oss-610-Reverse transfer capacitance C rss-21-
Effective output capacitance,1) energy related C o(er)V GS=0V,
V DS=0V to 480V
-45-pF
Effective output capacitance,2)
time related
C o(tr)-85-
Turn-on delay time t d(on)V DD=380V, V GS=0/10V,
I D=11A, R G=6.8Ω-10-ns
Rise time t r-5-
Turn-off delay time t d(off)-4470
Fall time t f-59
Gate Charge Characteristics
Gate to source charge Q gs V DD=480V, I D=11A- 5.5-nC Gate to drain charge Q gd-22-
Gate charge total Q g V DD=480V, I D=11A,
V GS=0 to 10V
-4560
文苑经典美文Gate plateau voltage V(plateau)V DD=480V, I D=11A- 5.5-V
1C
o(er)
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
2C
o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
静压实验Inverse diode continuous
forward current
I S T C=25°C--11A
Inverse diode direct current,
pulsed
I SM--33 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2V
Reverse recovery time t rr V R=480V, I F=I S ,
d i F/d t=100A/µs -400600ns
Reverse recovery charge Q rr-6-µC Peak reverse recovery current I rrm-41-A Peak rate of fall of reverse
recovery current
di rr/dt-1200-A/µs
Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Thermal resistance
R th10.015K/W R th20.034
R th30.056
R th40.124
R th50.143
R th60.057Thermal capacitance驳船
C th10.0002121Ws/K C th20.0007091
C th30.001184
C th40.00254
C th50.011
C th60.092
说唱音乐1 Power dissipation P tot = f (T C)
SPP11N60C3
P
t
o
t
2 Drain current
I D = f (
T C)
parameter: V GS≥ 10 V
I
D
3 Safe operating area
I D = f ( V DS )
parameter : D = 0 , T
=25°C
I
D
4 Transient thermal impedance
Z thJC = f (t p)
parameter : D = t/T
5 Typ. output characteristic
I D = f (V DS); T j=25°C parameter: t p = 10 µs, V GS
I
D
6 Typ. output characteristic
I D = f (V DS); T j=150°C
parameter: t p = 10 µs, V
GS
I
D
8 Drain-source on-state resistance
R
DS(on) = f (T j)
parameter : I = 7 A, V = 10 V
R
D
S
三氯化钒
(
o
n
)
7 Typ. drain-source on resistance
R DS(on)=f(I D)
远离伊甸园
parameter: T j=150°C, V GS Ω
R
D
S
(
o
n
)
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议