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讲座SPB77N06S2-12
Opti MOS ® Power-Transistor
Product Summary V DS 55V R DS(on)12
m
ΩI D
80
A
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature • Avalanche rated • d v /d t rated
P- TO263 -3-2
P- TO220 -3-1
Marking 2N06122N0612
Type
Package Ordering Code SPP77N06S2-12P- TO220 -3-1Q67060-S6029SPB77N06S2-12
P- TO263 -3-2
Q67060-S6030
Maximum Ratings , at T j = 25 °C, unless otherwise specified Parameter
Symbol Value Unit Continuous drain current
T C =25°C
I D
8056
A
Pulsed drain current
T C =25°C
I D puls 320Avalanche energy, single pulse
I D =77A, V DD =25V, R GS =25Ω
E AS 280mJ
Repetitive avalanche energy, limited by T jmax 1)E AR 16Reverse diode d v /d t
I S =77A, V DS =44V, d i /d t =200A/µs, T jmax =175°C
d v /d t 6kV/µs Gat
e source voltage V GS ±20V Power dissipation
T C =25°C
P tot 158W Operating and storage temperature T j , T stg
-55... +175°C IEC climatic category; DIN IEC 68-1
55/175/56
SPB77N06S2-12 Thermal Characteristics
Parameter Symbol Values Unit
非诚勿扰蔡敏>特朗普不
适合当总统
Thermal resistance, junction - case R thJC -0.630.95K/W Thermal resistance, junction - ambient, leaded R thJA--62SMD version, device on PCB: @ min. footprint
@ 6 cm2 cooling area 2)R thJA
-
-
-
-
62
40
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
Drain-source breakdown voltage
V GS=0V, I D=1mA
V(BR)DSS55--V
Gate threshold voltage, V GS = V DS
I D=93µA
V GS(th) 2.134
Zero gate voltage drain current V DS=55V, V GS=0V, T j=25°C
V DS=55V, V GS=0V, T j=125°C I DSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
V GS=20V, V DS=0V
I GSS-1100nA Drain-source on-state resistance
V GS=10V, I D=38A
R DS(on)-9.812mΩ
1Defined by design. Not subject to production test.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
SPB77N06S2-12
Electrical Characteristics
Parameter Symbol Conditions Values Unit
Transconductance g fs V DS≥2*I D*R DS(on)max,
I D=56A
2754-S
Input capacitance C iss V GS=0V, V DS=25V,
f=1MHz -17702350pF
Output capacitance C oss-460610 Reverse transfer capacitance C rss-120180
Turn-on delay time t d(on)V DD=30V, V GS=10V,
I D=77A,
R G=6.2Ω-1420ns
Rise time t r-2740
Turn-off delay time t d(off)-3450
Fall time t f-2639
Gate Charge Characteristics
Gate to source charge Q gs V DD=44V, I D=77A-912nC Gate to drain charge Q gd-1828 Gate charge total Q g V DD=44V, I D=77A,
V GS=0 to 10V
-4560 Gate plateau voltage V(plateau)V DD=44V, I D=77A- 5.9-V Reverse Diode
Inverse diode continuous
forward current
I S T C=25°C--80A
Inv. diode direct current, pulsed I SM--320 Inverse diode forward voltage V SD V GS=0V, I F=77A-1 1.3V
Reverse recovery time t rr V R=30V, I F=l S,
d i F/d t=100A/µs -4560ns
Reverse recovery charge Q rr-6480nC
SPB77N06S2-12
1 Power dissipation
P tot = f (T C)
parameter: V GS≥ 6 V
SPP77N06S2-12
P
t
o
t
2 Drain current
I D = f (T C)
parameter: V GS≥ 10 V
I
D
4 Max. transient thermal impedance
Z thJC = f (t p)
parameter : D = t p/T
10
10
10
10
10
10
K/W
维棉
Z
t
h
J
C
3 Safe operating area
I D = f ( V DS )
parameter : D = 0 , T C = 25 °C
3 SPP77N06S2-12
I
D
SPB77N06S2-12
5 Typ. output characteristic
I D = f (V DS); T j=25°C
parameter: t p = 80 µs
I
D
6 Typ. drain-source on resistance
R DS(on) = f (I D)
parameter: V
mΩ
38
R
D
S
(
n
)
7 Typ. transfer characteristics
I D= f ( V GS ); V DS≥ 2 x I D x R DS(on)max
parameter: t p = 80 µs
I
D
8 Typ. forward transconductance
g fs = f(I D); T j=25°C
parameter: g fs
g
虚拟实验室
f
s
SPB77N06S2-12
9 Drain-source on-state resistance
R DS(on) = f (T j)
parameter : I D = 38 A, V
= 10 V
mΩ
R
D
S
(
o
n
)
10 Typ. gate threshold voltage
V GS(th) = f (T j)
parameter: V GS = V DS
V
V
G
S
(
t
h
)
11 Typ. capacitances
C = f (V DS)
parameter: V GS=0V, f=1 MHz
10
10
10
pF
C
12 Forward character. of reverse diode
I F = f (V SD)
parameter: T j , t p = 80 µs
10
10
10
3
10
A
SPP77N06S2-12
I
F
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