HD74HC1G00
2–input NAND Gate
梅洛庞蒂ADE-205-309B (Z)
3rd. Edition
April 2001 Description
The HD74HC1G00 is high speed CMOS two input NAND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.
Features
• The basic gate function is lined up as hitachi uni logic series.
• Supplied on emboss taping for high speed automatic mounting.
• Electrical characteristics equivalent to the HD74HC00
Supply voltage range : 2 to 6 V
Operating temperature range : –40 to +85°C
• |I OH| = I OL = 2 mA (min)
Outline and Article Indication
HD74HC1G00
Function Table
Inputs Output Y A B
L L H
L H H
H L H
H H L
H : High level
L : Low level
Pin Arrangement
2
HD74HC1G00
3
Absolute Maximum Ratings
Item
Symbol Ratings Unit Test Conditions
Supply voltage range V CC –0.5 to 7.0V Input voltage range *1V I –0.5 to V CC + 0.5V Output voltage range *1, 2V O –0.5 to V CC + 0.5V Output : H or L Input clamp current I IK ±20mA V I < 0 or V I > V CC Output clamp current I OK ±20mA V O < 0 or V O >V CC Continuous output current
I O
±25mA V O = 0 to V CC Continuous current through V CC or GND
I CC or I GND ±25mA Maximum power dissipation at Ta = 25°C (in still air) *3P T 200mW Storage te
mperature Tstg
–65 to 150
°C
Notes:
The absolute maximum ratings are values which must not individually be exceeded, and furthermore, no two of which may be realized at the same time.农村经济与
科技 1.The input and output voltage ratings may be exceeded if the input and output clamp-current
ratings are observed.
2.This value is limited to 5.5 V maximum.
3.The maximum package power dissipation was caluculated using a junction temperature of
150°C.
Recommended Operating Conditions
Item
Symbol Min Max Unit Test Conditions
Supply voltage range V CC 26V Input voltage range V I 0V CC V Output voltage range V O 0V CC V Output current
I OL — 2.0mA
V CC = 4.5 V — 2.6V CC = 6.0 V I OH
—–2.0mA V CC = 4.5 V —–2.6V CC = 6.0 V Input rise / fall time t r , t f
01000ns V CC = 2.0 V (10% to 90%)
德隆系0500V CC = 4.5 V 0400V CC = 6.0 V Operating temperature
Ta –40
85
°C Note:Unused or floating inputs must be held high or low.
HD74HC1G00
4
Electrical Characteristics
Item Symbol V CC
T a = 25°C T a = –40 to 85°C Unit Test Conditions
(V)
Min Typ Max Min Max Input voltage
V IH
2.0 1.5—— 1.5—V
4.5 3.15—— 3.15—6.0
4.2—— 4.2—V IL
2.0——0.5—0.54.5—— 1.35— 1.356.0
—— 1.8— 1.8Output voltage V OH
2.0 1.9 2.0— 1.9—V
V IN
=I OH = –20 µA
4.5 4.4 4.5— 4.4—V IH or V IL
6.0 5.9 6.0— 5.9—4.5 4.18 4.31— 4.13—I OH = –2 mA 6.0
5.68 5.80— 5.63—I OH = –2.6 mA V OL
2.0—0.00.1—0.1I OL = 20 µA
4.5—0.00.1—0.16.0—0.00.1—0.14.5—0.170.26—0.33I OL = 2 mA 6.0
—0.180.26—0.33I OL = 2.6 mA Input current I IN 6.0——±0.1—±1.0µA V IN = V CC or GND Operating current
I CC
6.0
—
—
1.0
—
10.0
沃德事µA V IN = V CC or GND
HD74HC1G00
5
Switching Characteristics
切削机
Item
Symbol T a = 25°C
Unit
Test Conditions
张鲁新Min
Typ Max Output rise / fall time t TLH t THL —510ns Test circuit Propagation delay time
t PLH t PHL
—
7
15
ns
Test circuit
(C L = 15 pF, t r = t f = 6 ns, V CC = 5 V)Item
Symbol
T a = 25°C T a = –40 to 85°C Unit Test Conditions
V CC
Min Typ Max Min Max Output rise / fall time
t TLH 2.0—50125—155ns
Test circuit
t THL
4.5—1425—316.0—1221—26Propagation delay time
t PLH 2.0—48100—125ns
Test circuit t PHL
4.5—1220—256.0—917—21Input capacitance C IN —— 2.55—5pF Equivalent capacitance
C PD
—
—
10
—
—
—
pF (C L = 50 pF, t r = t f = 6 ns)
Note:C PD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression below.
I CC (opr) = C PD • V CC • f IN + I CC
HD74HC1G00 Test Circuit
6
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