华中科技大学
姓名：***
申请学位级别：硕士
专业：材料学
指导教师：***
2011-01
采风文学屋华 中 科 技 大 学 硕 士 学 位 论 文
摘 要
ZnO基透明导电氧化物薄膜有优良的光学和电学性能。掺杂Ga到ZnO薄膜(GZO)中时，GZO薄膜的晶格
畸变能会比较小，在室温条件下制备GZO薄膜的光学和电学性能也比较优良。本文使用磁控溅射法沉积GZO透明导电薄膜。 本实验采用自制的GZO氧化物靶材在FJL560型高真空磁控溅射与离子束溅射复合镀膜仪器上制备透明导电薄膜。通过改变溅射工艺参数：溅射时间、基底温度、溅射压强、靶基距和溅射功率，研究这些工艺参数对GZO薄膜结构特性、电学性能和光学性能的影响。用XRD、SEM、SPM、四探针和紫外-可见分光光度计对GZO 薄膜的各种特性进行表征，分析这些数据图形得出不同溅射工艺参数对GZO薄膜结构特性和光电性能的影响。 XRD、SEM和SPM的分析表明，基底温度在室温，改变溅射时间，GZO薄膜都具有（002）方向择优取向峰；基底温度在250℃时，（002）衍射峰强度最高；随基底温度升高，薄膜表面越来越平整。增加溅射压强可以减小GZO薄膜的表面粗糙度，0.5Pa时，GZO薄膜表面粗糙度是5.07nm。基底温度在室温，改变靶基距主要影响（002）衍射峰的强度；基底温度在350℃时，改变靶基距，薄膜的结晶取向会发生改变。基底温度在350℃时，改变溅射功率，薄膜都有（103）方向上的衍射峰。
研究发现，基底温度对GZO薄膜的光电性能影响很大。基底温度在室温，薄膜有最优电阻率6.30×10-3Ω·cm，透过率平均达到85%以上；基底温度在350℃，薄膜有最低电阻率2.15×10-4Ω·cm，同等条件下薄膜的平均可见光透过率在75%左右。溅射时间主要影响GZO薄膜的膜厚，溅射时间过短，薄膜
的电阻率会很高。基底温度在室温条件时，靶基距的高低对GZO薄膜电阻率影响较大。溅射功率主要影响GZO 薄膜结晶度的好坏，功率较低时，晶粒生长能力不强，结晶不好；功率过高时，溅射粒子会轰击薄膜表面，引起表面粗糙度的增加。
关键词：GZO薄膜透明导电氧化物结构特性电阻率可见光透过率
华 中 科 技 大 学 硕 士 学 位 论 文
Abstract
ZnO-based transparent conductive oxide thin films have excellent optical and electrical properties. ZnO thin films doped with Ga(GZO) has two advantages comparing to AZO thin film. Firstly, the crystal lattice distortion energy of the film is relatively small. What's more, GZO films prepared at room temperature have excellent electrical and optical properties. This paper selected magnetron sputtering to prepare GZO thin films.
In this paper, self-made GZO oxide targets have been used in FJL560 magnetron sputtering and ion plating equipment instrument to prepare transparent conductive film. By changing the sputtering process parameters (deposition time, substrate temperature, sputtering pressure, target substrate di
复兴大学stance and sputtering power), we have studied the influences of the process parameters to the structural properties, electrical properties and optical properties of GZO thin films. Using XRD, SEM, SPM, four-probe and UV - visible spectrophotometer to test various properties of GZO films, through analyzing the data we can summarize the effects to GZO thin film’s properties.
XRD, SEM and SPM analysis showed that the GZO films with different sputtering time had (002) direction orientation off excellent at the room temperature. The GZO films had the highest (002) peak intensity at 250℃. If the temperature was elevated, the surface would be smoother. Sputtering pressure could be used to decrease the surface roughness, 0.5Pa time, GZO films' surface roughness was 5.07nm. The GZO films had (103)
℃
diffraction peak under different sputtering power at 350 .
We have found that substrate temperature have great impact on the film's optical properties. If the substrate temperature was at room temperature, the film's resistivity was 6.30×10-3Ω·cm, the transmission was about 85%; when the substrate temperature was at 350 ℃, the film had the lowest resistivity of 2.15 × 10-4Ω • cm, and the average visible light transmittance of the film was about 75
%. The sputtering time mainly affected the film's thickness. If the time was too short, the film resistivity would be very high. Sputtering
声纳浮标华 中 科 技 大 学 硕 士 学 位 论 文
pressure was mainly used to provide the number of electrons that bombard the film surface, therefore it had little influence on the structure and optical properties. If substrate temperature was at room temperature, the target substrate distance would have great influence to the resistivity of GZO films. Sputtering power mainly affected the crystallization quality of GZO films, while low power would affect the grain's growth; if the power was too high, the sputtering particles would bombard the film surface, which can lead the increase of surface roughness.
Keywords: GZO thin films, Transparent Conductive Oxides, Structural properties, Resistivity, Visible light transmittance
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