长春pm2.5
专利名称：MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 发明人：YANO MORICHIKA,YAMAMOTO
llvmSABUROU,KURATA YUKIO,MATSUI
礼品论坛KANEKI,HAYAKAWA TOSHIROU
新加坡一航班折返申请号：JP11833979
g革命申请日：19790913
公开号：JPS5642396A
公开日：
玉米蛋白粉
19810420
摘要：PURPOSE:To suppress the deterioration of the characteristics of the semiconductor laser element by doping impurity forming an electron trap in a growing layer in a step of growing crystal and forming an antistructure of component elements for preventing transfer of hole. CONSTITUTION:Such an element as becomes a trap of free electrons at the time of growing crystal is doped to form an antiside of component element, and the transfer of hole are thus prevented, and the deterioration of the characteristics of the semiconductor laser element is suppressed. As designated, the hole VGa of the Ga in the GaAs are diffused toward the position of the Ga with solid line with arrow. The activation energy at that time is set at approx. 5.6eV, and can be diffused toward the AsGa at the side of the Ga as designated by broken line with arrow. The activation energy at this time is approx. 7.12eV. The probability of the diffusion at this time can be very reduced as designated by solid line with arrow, and the diffusion is prevented with the AsGa for the VGa. Thus, the assembly of the hole is avoided, and the occurrence of the dislocation can be suppressed.
申请人：SHARP KK
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议