高要市第二中学专利名称：Ohmic contact on p-type GaN 发明人：Jeffrey N. Miller,David P. Bour,Virginia M.
Robbins,Steven D. Lester
申请号：US11234993刘庆宁>三峡船闸
申请日：20050926
尾翼的作用公开号：US20070069380A1
公开日：冷轧钢管
20070329
专利附图：
摘要：An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a
来电不善电影metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
申请人：Jeffrey N. Miller,David P. Bour,Virginia M. Robbins,Steven D. Lester
地址：Los Altos Hills CA US,Cupertino CA US,Los Gatos CA US,Palo Alto CA US 国籍：US,US,US,US
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