李旭爽AOD4120
AOD4120
Symbol
Min Typ
Max
迭代Units BV DSS 20
V 1T J =55°C
5I GSS 100nA V GS(th)0.6 1.26
2
V I D(ON)
75
A
1418
T J =125°C
2120255775
g FS 19S V SD 0.77
1V I S
30
A C iss 900
pF C oss 162pF C rss 105pF R g
1.8
2.7ΩQ g (10V)15
18nC Q g (4.5V)7.29nC Q gs 1.8nC Q gd 2.8nC t D(on) 4.5
ns t r 9.2ns t D(off)18.7ns t f 3.3ns t rr 18ns Q rr
9.5
nC
0THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
R DS(ON)
Static Drain-Source On-Resistance
Body Diode Reverse Recovery Time
对数收益率Drain-Source Breakdown Voltage On state drain current Gate resistance
I D =250uA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20A
Reverse Transfer Capacitance V DS =V GS , I D =250µA V DS =16V, V GS =0V
V DS =0V, V GS =±16V Zero Gate Voltage Drain Current Gate-Body leakage current I F =20A, dI/dt=100A/µs
V GS =0V, V DS =10V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS uA Gate Threshold Voltage m Ω
信阳市第一
实验小学Forward TransconductanceDiode Forward Voltage I S =1A, V GS =0V
V DS =5V, I D =20A
V GS =2.5V, I D =4A
鲁培军
V GS =4.5V, I D =10A V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V GS =10V, V DS =10V, I D =20A
Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge I F =20A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =10V, R L =0.5Ω, R GEN =3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
基因
敲除C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0: Sept 2006
AOD4120
AOD4120
AOD4120
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