Symbol
V DS V GS
I DM马兰士c150
I AR E AR T , T Symbol
Typ Max 15204150R θJC
2.13R θJA Absolute Maximum Ratings T A =25°C unless otherwise noted V V北京新增一起
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Gate-Source Voltage Drain-Source Voltage Pulsed Drain Current C
Continuous Drain
Units T C =25°C T C =100°C I D T C =100°C I DSM T A =70°C
Power Dissipation B T C =25°C
Avalanche Current C
Repetitive avalanche energy L=50uH C
P D Continuous Drain T A =25°C T A =70°
C T A =25°C P DSM Steady-State
°C/W
Maximum Junction-to-Case B
Power Dissipation A
Junction and Storage Temperature Range °C/W Maximum Junction-to-Ambient A Steady-State °C/W Thermal Characteristics
Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s
黑止血钳AOD4142
N-Channel SDMOS TM POWER Transistor
General Description
The AOD4142 is fabricated with SDMOS TM trench
technology that combines excellent R DS(ON) with low gate G
D-PAK
Top View
S
Bottom View D
G
S
Symbol
Min Typ Max Units BV DSS 25
V
10T J =55°
C 50I GSS 100
nA V GS(th) 1.22
2.5
V I D(ON)
120
A 4.4
5.3T J =125°
C 6.67.97.89.8
m Ωg FS 65S V SD 0.7
1V I S
50
A C iss 1440
18002160pF C oss 310445580pF C rss 170285400pF R g
0.8 1.6 2.4ΩQ g (10V)25
3137nC Q g (4.5V)121518nC Q gs 4 4.86nC Q gd 5.3
8.913nC t D(on)8ns t r 10.4ns t D(off)29ns t f 9
ns t rr 9.61214
ns Q rr
17
21
25nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage On state drain current
I D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =30A
Reverse Transfer Capacitance I F =30A, dI/dt=500A/µs
V GS =0V, V DS =12.5V, f=1MHz
SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS µA Gate Threshold Voltage V DS =V GS , I D =250µA V DS =25V, V GS =0V
V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage
R DS(ON)Static Drain-Source On-Resistance
m ΩI S =1A, V GS =0V
V DS =5V, I D =30A V GS =4.5V, I D =20A
Gate resistance
V GS =0V, V DS =0V, f=1MHz Turn-Off Fall Time
Total Gate Charge V GS =10V, V DS =12.5V, I D =30A
Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge I F =30A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance Output Capacitance
Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =12.5V,R L =0.42Ω, R GEN =3ΩA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°
C.G. The maximum current rating is limited by bond-wires.
客户联盟H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev1 : Oct 2008
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V GS (Volts)
Figure 2: Transfer Characteristics
I D (A )
1
2
3
4
5
V DS (Volts)
I D (A )
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Q g (nC)
Figure 7: Gate-Charge Characteristics V G S (V o l t s )
5
10152025
V DS (Volts)
Figure 8: Capacitance Characteristics紫环
颈椎仪
C a p a c i t a n c e (p F )内燃机
学报 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
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