Absolute Maximum Ratings T A =25°
C unless otherwise noted AOD425
P-Channel Enhancement Mode Field Effect Transistor
Features
V DS (V) = -30V
I D = -50A (V GS = -10V)
R DS(ON)< 17m Ω(V GS = -10V)R DS(ON)< 35m Ω(V GS = -5V)
ESD Protected!100% Rg Tested!
General Description
The AOD425 uses advanced trench technology to
provide excellent R DS(ON)and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen Free*
S
G
D
TO252DPAK
南通市第三中学
Top View
Bottom View G
S D
G
S
D
Symbol
V DS V GS
I DM
T J , T STG
Symbol
Typ Max 16204150R θJC
1.7
2.1A
Continuous Drain Current
T A =25°C I DSM
-9T A =70°C -7°C
7136-55 to 175
W T A =70°C
1.6W P D T C =100°C Continuous Drain
Current F
Maximum
Units Parameter T C =25°C T C =100°C
-30A
I D Maximum Junction-to-Ambient A
Steady-State -50-36-70Power Dissipation A
T A =25°C P DSM 2.5Junction and Storage Temperature Range °C/W V V ±25Pulsed Drain Current
C
Power Dissipation B T C =25°C
Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Case B
Steady-State
°C/W
Thermal Characteristics
Parameter
Units Maximum Junction-to-Ambient
A
t ≤ 10s
R θJA °C/W
Symbol
Min Typ
Max
Units BV DSS -30
V -1T J =55°C
-5I GSS ±10uA V GS(th)-1.5-2.45
-3.5
V I D(ON)
-70
A
13.517T J =125°C
18.5242735
g FS 27S V SD -0.72
-
1V I S
-50
A C iss 1760
2200pF
C oss 360pF C rss 255pF R g
6.48ΩQ g (10V)30
38nC Q g (4.5V)11nC Q gs 7nC Q gd 8nC t ns Drain-Source Breakdown Voltage On state drain current
I D =-250uA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-20A
Reverse Transfer Capacitance V GS =-5V, I D =-20A
Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS Total Gate Charge Gate Drain Charge Diode Forward Voltage
R DS(ON)Static Drain-Source On-Resistance
V GS =0V, V DS =-15V, f=1MHz SWITCHING PARAMETERS Gate Source Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
Total Gate Charge V GS =-10V, V DS =-15V, I D =-20A
Input Capacitance Output Capacitance
m Ω
Maximum Body-Diode Continuous Current
I S =-1A,V GS =0V
DYNAMIC PARAMETERS Forward Transconductance V DS =-5V, I D =-20A Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-30V, V GS =0V
µA V DS =0V, V GS = ±25V D(on)11.5
t r 8ns t D(off)35ns t f 18.5ns t rr 2430ns Q rr
16
nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/µs
I F =-20A, dI/dt=100A/µs
Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =0.75Ω,
R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.高士功放机
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev3: May. 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V V 50
100
150
200
T C =100°
C T A =25°C
-55 to 175
0102030405060700
1
2345
I D (A )
DS (Volts)
Figure 1: On-Region Characteristics
V GS =-4V
-5V
-4.5V
-10V
05
10
1520
25
2
2.5
3
3.54
4.55
I D (A )
GS (Volts)
Figure 2: Transfer Characteristics 0.0
10.0
20.0
30.040.0
5
10
15
20
25
R D S (O N )(m Ω)
I D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V GS =-10V
1.0E-05
1.0E-04
1.0E-031.0E-021.0E-011.0E+001.0E+01
1.0E+020.0
0.2
0.40.60.8 1.0
I S (A )V SD (Volts)
Figure 6: Body-Diode Characteristics
125°C
0.8
11.21.41.6
1.8
N o r m a l i z e d O n -R e s i s t a n c e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V GS =-5V
010
20
30
40
50
5
10
15
20
R D S (O N )(m Ω)
V GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V DS =-5V
V GS =-5V
I D =-20A
25°C
125°C
I D =-20A
V GS =-10V
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Q V 10100R T T C =25°C
十八大反腐倡廉V T T C =100°C T A =25°C
-55 to 175
02
46810
5
10
1520253035
V G S (V o l t s )
g (nC)
Figure 7: Gate-Charge Characteristics 0
500
1000
1500
2000
2500
510152025
C a p a c i t a n c e (p F )
DS (Volts)
Figure 8: Capacitance Characteristics
C iss
801602403204000.0001
0.001
0.010.1110P o w e r (W )
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
0.010.1
1
10
0.00001
0.0001
0.001
0.010.1
1
10
Z θJ C N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c e
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
C oss
C rss
0.01
0.11
10000.01
0.1
110100
I D (A m p s )
V DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs 10ms
1ms DC
DS(ON) limited
J(Max)=175°C 10µs DS =-15V I D =-20A
Single Pulse
D=T on /T
T J,PK =T A +P DM .Z θJC .R θJC R θJC =2.1°C/W
T on
T
P D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
J(Max)=175°C T C =25°C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
T T 0
20406080
1000
25
50
75
100
125
150
175
P o w e r D i s s i p a t i o n (W )
CASE (°C)
Figure 13: Power De-rating (Note B)
01020304050600
25
50
75
100
125
150
175
C u r r e n t r a t i n g I
鼻渊散D (A )
CASE (°C)
Figure 14: Current De-rating (Note B)
110
100
100010000
0.00001
0.001
0.1101000P o w e r (W )
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z θJ A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c e
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
D=T on /T
T J,PK =T A +P DM .Z θJA .R θJA R θJA =50°C/W
T on
T
P D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd Vdd
Resistive Switching Test Circuit & W aveforms
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议