Symbol V V I I I E Symbol
Typ Max 14.2203950R θJC
2.53Maximum Junction-to-Ambient A
t ≤ 10s R θJA Absolute Maximum Ratings T A =25°C unless otherwise noted Gate-Source Voltage Drain-Source Voltage Pulsed Drain Current C
Continuous Drain G
Units Parameter T C =25°C T C =100°C
I Power Dissipation
B
T C =25°C Avalanche Current
C
Repetitive avalanche energy L=50uH
C
选矿学P T C =100°C Maximum Junction-to-Case B
Pulsed Forward Diode Current
C
T A =70°C
Power Dissipation A
T A =25°C P Steady-State
°C/W
°C/W Maximum Junction-to-Ambient A Steady-State °C/W Thermal Characteristics Parameter
Units AOD4140
N-Channel SDMOS TM
POWER Transistor
General Description
The AOD4140 is fabricated with SDMOS TM trench = 10V) = 10V) = 4.5V)
100% UIS Tested! 100% Rg Tested! G
D-PAK
Top View
S
Bottom View D
G
S
Symbol
Min Typ Max Units BV DSS 25
V
cad二次开发10T J =55°C
50I GSS 100
nA V GS(th)12
3V I D(ON)
120
A 5.77T J =125°C
8.610.51114
m Ωg FS 50S V SD 0.7
1V I S
55
A C iss 990
11801450pF C oss 210275350pF C rss 125175245pF R g
1.1 1.7
2.5ΩQ g (10V)18
21.726nC Q g (4.5V)91113nC Q gs 345nC Q gd 4.5
6.49
nC t D(on) 6.8ns t r 13.8ns t D(off)21.5ns t f 8.7
ns
t rr 8.510.613ns Q rr
13
16
19
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage On state drain current
I D =250uA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =30A
Reverse Transfer Capacitance I F =30A, dI/dt=500A/µs
V GS =0V, V DS =12.5V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS µA Gate Threshold Voltage V DS =V GS , I D =250µA V DS =25V, V GS =0V
V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage
R DS(ON)Static Drain-Source On-Resistance
m ΩI S =1A, V GS =0V
V DS =5V, I D =30A V GS =4.5V, I D =20A
Gate resistance
V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V GS =10V, V DS =12.5V, I D =30A
Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge I F =30A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =12.5V,R L =0.42Ω, R GEN =3ΩA: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.中华
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B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambien
t.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1 : Oct 2008
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V GS (Volts)
Figure 2: Transfer Characteristics
I D (A )
V DS (Volts)
Fig 1: On-Region Characteristics
I D (A )
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
1520
25
Q g (nC)
Figure 7: Gate-Charge Characteristics V G S (V o l t s )
100012001400160018000
5
V DS (Volts)
Figure 8: Capacitance Characteristics
三星d988C a p a c i t a n c e (p F )
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS