TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG0S3HTA00 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-den
sity non-volatile memory data storage.
The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES
•Organization x8
Memory cell array 2112 × 64K × 8
Register 2112× 8
Page size 2112 bytes
Block size (128K + 4K) bytes
•Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
ECC Status Read
•Mode control
Serial input/output
•Number of valid blocks
Min 1004 blocks
Max 1024 blocks
•Power supply
V CC= 2.7V to 3.6V
•Access time
Cell array to register 40 µs typ.
Serial Read Cycle 25 ns min (CL=50pF)
•Program/Erase time
Auto Page Program 330 µs/page typ.
Auto Block Erase 2.5 ms/block typ.
•Operating current
Read (25 ns cycle) 30 mA max.
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
µA max
Standby 50
敏感教师•Package
TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
•8bit ECC for each 528Bytes is implemented on a chip.
PIN ASSIGNMENT (TOP VIEW)
叶村叠罗汉
PIN NAMES
NC NC NC NC I/O8I/O7I/O6I/O5NC NC NC V CC V SS NC NC NC I/O4I/O3I/O2I/O1NC NC NC NC
飞鸽传书2009
NC NC NC NC NC NC BY
/RY RE CE NC NC V CC V SS NC NC CLE ALE WE WP NC NC NC NC NC
×8
×8
TC58BVG0S3HTA00
智能代理
技术BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL RATING VALUE UNIT V CC Power Supply Voltage −0.6 to 4.6 V V IN Input Voltage −0.6 to 4.6
V V I/O Input /Output Voltage −0.6 to V CC + 0.3 (≤ 4.6 V)
V P D Power Dissipation
0.3 W T SOLDER Soldering Temperature (10 s) 260 °C T STG Storage Temperature −55 to 150
°C T OPR
Operating Temperature
0 to 70
°C
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L PARAMETER CONDITION MIN MAX UNIT C IN Input V IN = 0 V ⎯ 10 pF C OUT Output
V OUT = 0 V
⎯
10 pF
* This parameter is periodically sampled and is not tested for every device.
I/O1CE
BY /RY to WP
VALID BLOCKS
UNIT
MAX SYMBOL PARAMETER MIN
TYP.
N VB Number of Valid Blocks 1004 ⎯ 1024 Blocks
NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
RECOMMENDED DC OPERATING CONDITIONS
UNIT
MAX
TYP.
SYMBOL PARAMETER MIN
V CC Power Supply Voltage 2.7 ⎯ 3.6 V
V IH High Level input Voltage Vcc x 0.8 ⎯V CC+ 0.3 V
V IL Low Level Input Voltage −0.3*⎯Vcc x 0.2 V
*−2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta = 0 to 70 , V CC= 2.7 to 3.6V)
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70 , V CC= 2.7 to 3.6V)
*1: tCLS and tALS can not be shorter than tWP
*2: tCS should be longer than tWP + 8ns.
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