NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers
f T = 8 GHz
F = 1.3 dB at 900 MHz
12
3
VPS05161
ESD: E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
平本一穗BFR 193RCs 1 = B 2 = E 3 = C SOT-23 Maximum Ratings
Parameter Symbol Unit
Value
Collector-emitter voltage12
V CEO V Collector-emitter voltage V CES20
Collector-base voltage20
V CBO
2
V EBO
Emitter-base voltage
Collector current I C80mA Base current I B10
Total power dissipation, T S 69 °C F)P tot580mW Junction temperature T j150°C Ambient temperature T A-65 (150)
Storage temperature T stg-65 (150)
Thermal Resistance
Junction - soldering point R thJS 140K/W
1T
S is measured on the collector lead at the soldering point to the pcb
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO12--V
I C = 1 mA, I B = 0
I CES--100µA Collector-emitter cutoff current
V CE = 20 V, V BE = 0
Collector-base cutoff current
I CBO--100nA V CB = 10 V, I E = 0
Emitter-base cutoff current
I EBO--1µA V EB = 1 V, I C = 0
DC current gain
h FE50100200-
I C = 30 mA, V CE = 8 V
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
AC characteristics(verified by random sampling)
Transition frequency
I C = 50 mA, V CE = 8 V, f = 500 MHz
魏星艳f T68-GHz
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb-0.681pF
Collector-emitter capacitance
V CE = 10 V, f = 1 MHz
C ce-0.24-
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb- 1.8-
Noise figure
I C = 10 mA, V CE = 8 V, Z S = Z Sopt , f = 900 MHz
f = 1.8 GHz F
-
-
1.3
2.1
-
-
dB
Power gain, maximum available F)
I C = 30 mA, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt , f = 900 MHz
f = 1.8 GHz G ma
-
-
14.5
9
-
-
Transducer gain
I C = 30 mA, V CE = 8 V, Z S = Z L = 50 , f = 900 MHz
f = 1.8 GHz |S21e|2
-
-
12.5
7
-
-
1G ma = |S21 / S12| (k-(k2-1)1/2)
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :Transistor Chip Data
IS =0.2738fA VAF =24V NE = 1.935-VAR = 3.8742V NC =0.94371-
RBM = 1.8368 CJE = 1.1824fF TF =18.828ps ITF =0.96893mA VJC = 1.1828V TR = 1.0037ns MJS =0-XTI =pasco
3
-
BF =125-IKF =0.26949A BR =14.267-IKR =0.037925
A
RB =1 RE =0.76534VJE =0.70276V XTF =0.69477-PTF =0deg MJC =0.30002-CJS =0fF XTB =0-FC =
0.72063
-
NF =0.95341-ISE =10.627fA NR = 1.4289-ISC =0.037409fA IRB =0.91763mA
RC =0.11938 MJE =0.48654-VTF =0.8V CJC =935.03fF XCJC =0.053563-VJS =0.75V EG = 1.11eV TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG
Package Equivalent Circuit:
天津市建筑业协会For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: www.infineon/products/discrete/index.htm
Total power dissipation P tot = f (T A*, T S) * Package mounted on epoxy
mW
楼宇智能化论文P
t
o
理论与
改革t
Permissible Pulse Load R
thJS = f (t p)
10
10
10
10
K/W
R
t
h
J
S
Permissible Pulse Load
P totmax/P totDC = f (t p)
P
t
o
t
m
a
x
/
P
t
o
t
D
C
Collector-base capacitance C cb = f (V CB) f = 1MHz
C
c
b
Transition frequency f T = f (I C)
V CE= Parameter
Power Gain G ma, G ms =
f(I C)
f = 0.9GHz
V CE = Parameter
G
Power Gain G ma, G ms = f(I C)
f = 1.8GHz
V CE = Parameter
G
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