T YPICAL APPLICATION
D ESCRIPTION and Level Translator
The L TC ®4555 provides power conversion and signal
level shifting needed for low voltage 2.5G and 3G cellular telephones to interface with 1.8V or 3V subscriber identity modules (SIMs). The part meets all type approval require-ments for 1.8V and 3V SIMs and smart cards. The part contains an LDO linear regulator to supply SIM power at either 1.8V or 3V from a 3V to 6V input. The output volt-age is selected with a single pin and up to 50mA of load current can be supplied.
Internal level translators allow controllers operating with supplies as low as 1.2V to interface with 1.8V or 3V smart cards. Battery life is maximized by 20μA operating current and <1μA shutdown current. Board area is minimized by the 3mm × 3mm leadless QFN package.
Typical SIM Interface
L , L T , L TC and L TM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
F EATURES
A PPLICATIONS n
SIM Power Supply: 1.8V/3V at 50mA n Input Voltage Range: 3V to 6V
n Controller Voltage Range: 1.2V to 4.4V n 14kV ESD On All SIM Contact Pins
n
Meets All ETSI, IMT-2000 and ISO7816 SIM/Smart Card Interface Requirements n Level T ranslators to 1.8V or 3V n 20μA Operating Current
n Logic-Controlled Shutdown (I SD < 1μA)n Available in a Low Profi le, 16-Pin (3mm × 3mm) QFN Package
n
SIM Interface in 3G Cellular Telephones n Smart Card Readers
V BAT
V BAT , DV CC , V CC to GND ............................–0.3V to 6.5V Digital Inputs to GND ................................–0.3V to 6.5V CLK, RST , I/O to GND .......................–0.3V to V CC + 0.3V
V CC Short-Circuit Duration ...................................Infi
nite Operating Temperature Range (Note 2)....–40°C to 85°C Junction Temperature ...........................................125°C Storage Temperature Range ...................–65°C to 125°C
(Note 1)
16151413
5678TOP VIEW 17
UD PACKAGE
16-LEAD (3mm s 3mm) PLASTIC QFN
9
思春期少女1011124
321SHDN V SEL DV CC NC NC
CLK GND RST
N C
D A T A
R I N
C I N
V B A T
N C
V C C
I /O
T JMAX = 125°C, θJA = 68°C/W , θJC = 4.2°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION
TEMPERATURE RANGE L TC4555EUD#PBF
L TC4555EUD#TRPBF
LAAA
16-Lead (3mm × 3mm) Plastic QFN
–40°C to 85°C
Consult L TC Marketing for parts specifi ed with wider operating temperature ranges.Consult L TC Marketing for information on non-standard lead based fi nish parts.
For more information on lead free part marking, go to: www.linear /leadfree/ For more information on tape and reel specifi cations, go to: www.linear /tapeandreel/
P IN CONFIGURATION
A BSOLUTE MAXIMUM RATINGS E LECTRICAL CHARACTERISTICS The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T A = 25°C.
PARAMETER CONDITIONS
MIN TYP MAX UNITS
抗独特型抗体V BAT Operating Voltage l
3
6V V BAT Operating Current I CC = 0mA
l 20
30μA V BAT Shutdown Current SHDN = 0V , V BAT = 4.5V l 1μA DV CC Operating Voltage l
1.2
4.4
V DV CC Operating Current f CLK = 1MHz l 5
10μA DV CC Shutdown Current SHDN = 0V
l 1μA DV CC Undervoltage Lockout l 0.5 1.1V V CC Output Voltage
V SEL = DV CC , V BAT = 3V , I VCC = 50mA
V SEL = DV CC , V BAT = 3.3V to 6V , I VCC = 0mA to 50mA V SEL = 0, V BAT = 2.6V to 6V , I VCC = 0mA to 50mA l l
2.81.7 2.8
3.01.8 3.21.9V
V V V CC Short-Circuit Current V CC Shorted to GND 60110
175mA Controller Inputs/Outputs Input Voltage Range SHDN , V SEL , R IN , C IN , DATA 0
DV CC V Input Current (I IH /I IL )
SHDN , V SEL , R IN , C IN l –100100nA High Input Threshold Voltage (V IH )R IN , C IN l 0.7 × DV CC
V Low Input Threshold Voltage (V IL )R IN , C IN l 0.2 × DV CC
V High Input Threshold Voltage (V IH )SHDN , V SEL l 1
V Low Input Threshold Voltage (V IL )
女子冰球SHDN , V SEL
l黄励军
0.4
V
E LECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2: The L TC4555E is guaranteed to meet performance specifi cations from 0°C to 85°C. Specifi cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation with statistical process controls.
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T A = 25°C.
PARAMETER
CONDITIONS MIN TYP MAX UNITS High Level Input Current (I IH )DATA
l –2020μA Low Level Input Current (I IL ) DATA
l 1mA High Level Output Voltage (V OH )DATA I OH = 20μA, I/O = V CC l 0.7 × DV CC
V Low Level Output Voltage (V OL )DATA
I OL = –200μA, I/O = 0V l
0.4
V DATA Pull-Up Resistance Between DATA and DV CC 132030
kΩSIM Inputs/Outputs (V CC = 3V)High Level Output Voltage (V OH )I/O, I OH = 20μA, DATA = DV CC l 0.8 × V CC
V
Low Level Output Voltage (V OL )I/O, I OL = –1mA, DATA = 0V l 0.4
V High Level Output Voltage (V OH )RST , CLK, I OH = 20μA l 0.9 × V CC
V Low Level Output Voltage (V OL ) RST , CLK, I OL = –200μA l 0.4
V I/O Pull-Up Resistance Between I/O and V CC
6.510
14
kΩSIM Inputs/Outputs (V CC = 1.8V)High Level Output Voltage (V OH )I/O, I OH = 20μA, DATA = DV CC l 0.8 × V CC
V Low Level Output Voltage (V OL )I/O, I OL = –1mA, DATA = 0V l 0.3
V High Level Output Voltage (V OH )RST , CLK, I OH = 20μA l 0.9 × V CC
V Low Level Output Voltage (V OL ) RST , CLK, I OL = –200μA l 0.2 × V CC
V I/O Pull-Up Resistance Between I/O and V CC
6.5
10
14kΩSIM Timing Parameters CLK Rise/Fall Time C CLK = 30pF , V CC = 1.8V/3V l 18ns RST , I/O Rise/Fall Time RST , I/O Loaded with 30pF , V CC = 1.8V/3V
l 1
μs Max CLK Frequency 5
MHz V CC Turn-On Time SHDN = 1, (Note 3)0.5ms V CC Discharge Time to 1V
SHDN = 0, (Note 3)
0.5ms
苏霍姆林斯基的教育思想Note 3: Specifi cation is guaranteed by design and not 100% tested in production. T YPICAL PERFORMANCE CHARACTERISTICS V CC Short-Circuit Current
I BAT vs V BAT
P IN FUNCTIONS TEMPERATURE (°C)
–40S H O R T -C I R C U I T C U R R E N T (m A )
170150130
110907050
20604555 G01
–20
4080
承德师专100
V BAT (V)
2.5
I B A T (μA )
22
20
1816141210 4.0 5.04555 G02
3.0 3.5
4.5
5.5
6.0
SHDN (Pin 1): Controller Driven Shutdown Pin. This pin should be high (DV CC ) for normal operation and low to activate a low current shutdown mode.
V SEL (Pin 2): V CC Voltage Select Pin. A low level selects V CC = 1.8V while driving this pin to DV CC selects V CC = 3V .DV CC (Pin 3): Supply Voltage for the Controller Side I/O Pins (C IN , R IN , DATA). When below 1.1V , the V CC supply is disabled. This pin should be bypassed with a 0.1μF ceramic capacitor close to the pin.NC (Pins 4, 6, 12, 16): No Connect.
V BAT (Pin 5): V CC Supply Input. This pin can be between 3V and 6V for normal operation. V BAT quiescent current reduces to <1μA in shutdown. This pin should be bypassed with a 0.1μF ceramic capacitor close to the pin.V CC (Pin 7): SIM Card V CC Supply. A 1μF low ESR capacitor needs to be connected close to the V CC pin for stable opera-tion. This pin is discharged to GND during shutdown.I/O (Pin 8): SIM-Side Data I/O. The SIM card output must be on an open-drain driver capable of sourcing >1mA.
RST (Pin 9): Reset Output Pin for the SIM Card.GND (Pin 10): Ground for the SIM and Controller . Proper grounding and bypassing is required to meet 14kV ESD specifi cations. CLK (Pin 11): Clock Output Pin for the SIM Card. This pin is pulled to ground during shutdown. Fast rising and falling edges necessitate careful board layout for the CLK node.
C IN (Pin 13): Clock Input from the Controller .R IN (Pin 14): Reset Input from the Controller .
DATA (Pin 15): Controller Side Data I/O. This pin is used for bidirectional data transfer . The controller output must be an open-drain confi guration. The open-drain output must be capable of sinking greater than 1mA.Exposed Pad (Pin 17): GND. Must be soldered to PCB.
B LOCK DIAGRAM
V
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