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GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

第47卷第10期

红外与激光工程2018年10月

Vol.47No.10Infrared and Laser Engineering Oct.2018xp仿windows7主题包

GaSb 基光泵浦半导体碟片激光器的研究进展(特邀)

尚金铭1,2，张宇1,2，杨成奥1,2，谢圣文1,2，黄书山1,2，袁

纳米氧化铋野1,2，张一1,2，邵福会1,2，徐应强1,2，牛智川1,2

染料敏化太阳能电池(1.中国科学院半导体研究所半导体超晶格国家重点实验室，北京100083；

2.中国科学院大学材料科学与光电技术学院，北京100049)

套管挤压摘要:GaSb 基光泵浦半导体碟片激光器(OP-SDLs)可以获得高光束质量和高功率的红外激光输出，是近年来新型中红外激光器件研究领域的热点。文中介绍了GaSb 基光泵浦半导体碟片激光器增益芯片的外延结构和工作原理，综述了2μm 波段GaSb 基泵浦半导体碟片激光器的研究进展，讨论了该类激光器的波长扩展、功率提升、实现窄线宽短脉冲发射和有效热管理关键问题，评述了性能发展的主要技术方向和应用前景。

关键词:GaSb 基光泵浦半导体碟片激光器；2μm ；热管理；高光束质量

中图分类号:TN24文献标志码:A DOI :10.3788/IRLA201847.1003004

Research progress of GaSb based optically pumped

semiconductor disk lasers (invited )

Shang Jinming 1,2,Zhang Yu 1,2,Yang Cheng′ao 1,2,Xie Shengwen 1,2,Huang Shushan 1,2,Yuan Ye 1,2,Zhang Yi 1,2,Shao Fuhui 1,2,Xu Yingqiang 1,2,Niu Zhichuan 1,2

(1.State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,

Chinese Academy of Sciences,Beijing 100083,China;

2.College of Materials Science and Opto-Electronic Technology,University of

Chinese Academy of Sciences,Beijing 100049,China)Abstract:GaSb based optically pumped semiconductor disk lasers (OP -SDLs)attracts considerable attention in novel mid -infrared laser device research field for their potential excellent beam quality and high output power.The epitaxy str

铁路运输安全保护条例

ucture and basic principle of GaSb based OP -SDLs wafers were summarized.The development of GaSb based OP-SDLs at 2μm wavelength was reviewed respectively by analyzing the aspects of wavelength extending,power scaling,line -width narrowing,short -pulse generation and effective thermal management.The technical development direction and application prospects of this type of laser were discussed.警用手

Key words:GaSb based optically pumped semiconductor disk lasers;

2μm;

thermal management;excellent beam quality 1003004-1收稿日期:2018-05-07;

修订日期:2018-06-12基金项目:

(61790580);973(2014CB643903)作者简介:

(1993-),,,。Email:shangjinming@ 导师简介:(1963-),

,,,。Email:zcniu@

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