暖通系统JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3875 TRANSISTOR
老子
道学文化研究会
(NPN) FEATURES · High hFE
· Low noise
· Complementary to KTA1504
MAXIMUM RATINGS (T a =25 unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions M in T yp M ax Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 50 V Emitter-base breakdown voltage
V (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off current
I CBO V CB = 60V, I E =0 0.1 μA Emitter cut-off current
I EBO V EB = 5V, I C =0 0.1 μA DC current gain
h FE V CE = 6V, I C = 2mA 70 700 Collector-emitter saturation voltage
V CE (sat) I C =100mA, I B = 10mA 0.1 0.25 V base-emitter saturation voltage
V BE (sat) I C =100mA, I B = 10mA 1 V Transition frequency
石胎f T V CE =10V, I C = 1mA 80 MHz Collector output capacitance
C ob V CB =10V,I E =0,f=1MH Z 2.0 3.5 pF Noise figure NF V CE =6V,I C =0.1mA,Rg=10k Ω,f=1KH Z 1.0 10 dB CLASSIFICATION OF h FE
Rank
wwerO Y GR BL
Range
应收账款周转率70-140 120-240 200-400 350-700 Marking
书录解题
ALO ALY ALG ALL 3. COLLECTOR ℃
A,May,2011www.nscn 【南京南山半导体有限公司 — 长电贴片三极管选型资料】 www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
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