HSMP-3866

HSMP-3866
Quad PIN Diode Pi  Attenuator 300 kHz to 3 GHz in SOT 25 Package
Data Sheet
Features
• 4 PIN Diodes in a SOT-25 package • 300 kHz to 3 GHz usable frequency band • Low Current • Low insertion Loss • MSL-1 and  Lead-free
• Tape & Reel packaging option available
Specification At 1 GHz, V+=1.2V
• IIP3 = 30 dBm (Typical)• Attenuation = 36 dB (Typical)• Insertion Loss = -2.5 dB (Typical)• Return Loss = -18 dB (Typical)
Application
• Broadband system application (i.e., CATV, WCDMA, etc)• General purpose Voltage-Control-Attenuator for low current applications.
Description
Avago Technology’s HSMP-3866 is a wideband, low insertion loss, low current, Quad PIN Diode Pi  Attenuator in a low cost surface mount SOT-25 package. It provides a good match and flat attenuation over an extremely wide band from 300 kHz to 3 GHz.
The SOT-25 packages gives a reduction in part count and takes up less space on board compared to multi package solutions.
Four PIN Diodes in one package encourages performance repeatability for improved production yield at board level.
Package Marking and Pin connections
Note:
Package marking provides orientation and identification “BT”= Device Code
“x”  = Month code indicates the month of manufacture
1
BTx
2
3
4
5
Pin 2 :Series Bias盐步中学
Pin 3 : RF In/Out Pin 1 : RF In/Out
Pin 4 :
Shunt Bias Pin 5 :Shunt Bias
Absolute Max Ratings [1], Tc = +25°C
Symbol
Parameter
Unit
Abs Max
I f Forward Current (1 µs Pulse)Amp 1P IV Peak Inverse Voltage V 50T j Junction Temperature °C 150T stg Storage Temperature °C -65 to 150q jb
Thermal Resistance [2]
°C/W
167
Notes :
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Thermal Resistance is measured from junction to board using IR method.
Electrical Specifications, Tc = +25°C (Each Diode)
Minimum Breakdown Voltage V BR  (V)
Typical Series Resistance  R S  (W )Typical Total Capacitance  C T  (pF)50
3.0/1.5*
0.22
碳酸氢钠溶液Test Condition
V R  = V BR
Measure I R  ≤ 10 µA
I F  = 10 mA, f = 100 MHz I F  = 100 mA*
V R  = 50 V          f = 1 MHz
Typical Performance for HSMP-3866 Quad PIN Diode π  Attenuator @ +25°C
Parameter
Test Condition
Units
Typical
Insertion Loss Vc = 5V, V+ = 1.2V, Freq = 1 GHz dB -2.5Return Loss Vc = 0V, V+ = 1.2V, Freq = 1 GHz dB -18Attenuation Vc = 0V, V+ = 1.2V, Freq = 1 GHz dB 36IP3Vc = 1.5V, V+ = 1.2V, Freq = 1 GHz dBm 30IP3Vc = 5.0V, V+ = 1.2V, Freq = 1 GHz dBm 40IP3Vc = 1.5V, V+ = 1.2V, Freq = 300 MHz dBm 25IP3Vc = 5.0V, V+ = 1.2V, Freq = 300 MHz dBm 37IP3Vc = 1.5V, V+ = 1.2V, Freq = 100 MHz dBm 23IP3
Vc = 5.0V, V+ = 1.2V, Freq = 100 MHz
dBm
35
Notes :
1.  Measurement above obtained using Wideband RF circuit design shown in Figure 1 & 2
Typical Performance, Tc = +25°C (Each Diode)
Total Resistance  R T  (W )Carrier Lifetime    t (ns)Reverse Recovery Time T rr  (ns)Total Capacitance  C T  (pF)22
500
80
0.22
Test Condition
I F  = 1 mA        f = 1 MHz
I F  = 10mA I R  = 250 mA
V R  = 50 V          I F  = 10 mA 90% Recovery律师执业管理办法
V R  = 50V f = 1MHz
RFin
Figure 1. Wideband Quad PIN Diode π Attenuator Circuit
Component
Value
R1, R2620 W R3390
W R42200 W C1 - C5
10 nF
Figure 2. Circuit Board Layout.
10.01
0.10
1.00
10.00
100.00
Forward Current (mA)
膨胀珍珠岩板R e s i s t a n c e  (O H M S )
F o r w a r d  C u r r e n t  (m A )
+125˚C
+25˚C
- 50˚C
0.01
0.10
1.00
10.00
100.00
0.2
0.40.60.81
1.2
Forward Voltage (V)
Figure 3. RF Resistance vs. Forward Bias Current Figure 4. Forward Current vs. Forward Voltage
Typical Performance Curves for Single Diode @ Tc = +25°C
Typical Performance Curves for Single Diode @ Tc = +25°C
Control Voltage - (V)
A t t e n u a t i o n  - (d
B )
Figure 6. Insertion Loss vs. Frequency
Figure 7. Return Loss vs. Frequency Figure 8. Input IP3 vs. Attenuation
Figure 9. Attenuation vs. Control Voltage
0Frequency - (MHz)
I n s e r t i o n  L o s s  - (d B )
-50-40-30-20-10
00
500
1000
1500
2000
2500
3000
愉悦和痛苦
Frequency - (MHz)
Vc=0V
Vc=+5V
R e t u r n  L o s s  - (d B )
1020
30
40
1020
3040
Attenuation (dB)
I N P U T  I P 3 (d B m )1GHz
300 Hz
100 MHz
Reverse Voltage (V)
T o t a l  C a p a c i t a n c e  (p F )
0.15
0.20
0.25
0.30
0.350
2
4
6
8
10
12
14
16
18
20
1 MHz
100 MHz 1 GHz
Figure 5. RF Capacitance vs Reverse Bias
Package Outline & Dimension
PCB Footprint
Symbol
Dimension
Minimum Nominal Maximum
D  2.80  2.90  3.00
H  2.60  2.80  3.00
E  1.50  1.60  1.70
e1  1.88  1.90  1.92
e0.930.950.97
B0.350.50
A20.9  1.15  1.30
C0.08 0.22
L0.35 0.60
A10 0.15
A0.9    1.40
0.074
1.9限流熔断器
0.037
0.95
0.0280.094 2.4
0.039
1.0
DIMENSIONS IN Inches
PLANE

本文发布于:2024-09-22 06:46:12,感谢您对本站的认可!

本文链接:https://www.17tex.com/xueshu/117850.html

版权声明:本站内容均来自互联网,仅供演示用,请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系,我们将在24小时内删除。

上一篇:IP55的含义
标签:管理   盐步   膨胀   限流   执业
留言与评论(共有 0 条评论)
   
验证码:
Copyright ©2019-2024 Comsenz Inc.Powered by © 易纺专利技术学习网 豫ICP备2022007602号 豫公网安备41160202000603 站长QQ:729038198 关于我们 投诉建议