Protection IC for 1-Cell Battery Pack
Features
High Detection Accuracy
Overcharge Detection: ±25mV
Overdischarge Detection: ±50mV
Discharge Overcurrent Detection: ±15mV
Charge Overcurrent Detection: ±30mV High Withstand Voltage
Absolute maximum ratings: 28V
(V- pin and CO pin)
Ultra Small Package
SOT-23-6 Description
The 8261 is the 1-cell protection IC for lithium-ion/lithium-polymer rechargeable battery pack. The high accuracy voltage detector and delay time circuits are built in 8261 with state-of-art design and process.
To minimize power consumption, 8261 activates power down mode when an overdischarge event is detected (for power-down mode enabled version). Besides, 8261 performs protection functions with four external components for miniaturized PCB.
The tiny package is especially suitable for compact portable device, i.e. slim mobile phone and Bluetooth earphone.
Application
Mobile phone battery packs
Digital camera battery packs
Bluetooth earphone Li-ion battery module Typical Application Circuit
Package and Pin Description
Ordering Information Marking Information
Pin No. Symbol pin Description
1 DO Connection of discharge control FET gate
2 V-
Voltage detection between V- pin and VSS pin
(Overcurrent / charger detection pin)
3 CO Connection of charge control FET gate
4 NC No connection
5 V DD Connection for positive power supply input
6 V SS Connection for negative power supply input
Version code
SOT-23-6
1 2 3
6 5 4
1) ~ 3) : Version code
Product version code:
8261 Overcharge
Detection
Voltage
V DET1 (V)
Overcharge
Release
Voltage
V REL1 (V)
Overdischarge
Detection
Voltage
V DET2 (V)
Overdischarge
Release Voltage
V REL2 (V)
Overcurrent
Detection
0V Battery
Charge Function
Power down
mode
Function
G3P 4.200 4.100 2.750 2.850 0.150 Unavailable Yes G2J 4.325 4.125 2.500 2.900 0.150 Unavailable Yes G3J 4.280 4.080 3.000 3.000 0.080 Available Yes G2N 4.275 4.175 2.300
2.400 0.100 Available Yes Remark Please contact our sales office for the products with detection voltage value other than those specified above.
Absolute Maximum Ratings
Symbol Descriptions Rating
Units V DD
Supply Voltage -0.3 to 7
V V-
V- pin V DD - 28 to V DD + 0.3 V V CO
CO pin V DD -28 to V DD + 0.3 V V DO
Output Voltage
DO pin Vss - 0.3 to V DD + 0.3
V
P D Power Dissipation SOT23-6
250 mW T OPT
Operating Temperature Range -40 to +85 °C T STG
Storage Temperature Range -55 to +125
°C
Applying any over “Absolute Maximum Ratings” practice can permanently damage the device. These data are indicated the absolute maximum values only but not implied any operating performance.
Electrical Characteristics
Symbol
Item Conditions MIN TYP MAX Unit
Detection Voltage
V DET1 Overcharge detection voltage -- V DET1-0.025 V DET1 V DET1+0.025V
V REL1 Overcharge release voltage V DET1 ≠ V REL1
V REL1-0.05 V REL1 V REL1+0.05 V V DET2 Over-discharge detection voltage -- V DET2-0.05 V DET2 V DET2+0.05 V V REL2 Over-discharge release voltage V DET2 ≠ V REL2 V REL2-0.10 V REL2 V REL2+0.10 V V DET3 Discharge overcurrent detection voltage
V DD =3.5V V DET3-0.015 V DET3
V DET3+0.015
V
V DET4 Charge overcurrent detection V DD =3.5V -0.13 -0.10 -0.07 V V SHORT
Load short-circuiting detection voltage
V DD =3.5V
0.30 0.50 0.70 V
Detection Delay Time
- 0.96 1.2 1.4 s
VDD=4.28V , C ISS =1200pF ,
V TH =0.6V
0.96 1.22 1.42 s t VDET1* Output delay time of overcharge
VDD=4.28V , C ISS =1200pF ,
V TH =0.4V
0.95 1.23 1.43 s V DET2 ＞2.5V 120 150 180 ms t VDET2 Output delay time of overdischarge V DET2 ≦2.5V 100 150 200 ms V DET2 ＞2.5V 7.2 9 11 ms t VDET3
Output delay time of discharge over
current V DET2 ≦2.5V 6 9 12 ms t SHORT
Output delay time of Load short-circuiting detection
V DD =
3.5V 240 300 360
μs V DD = 3.5V 7.2 9 11 ms
V DD =3.5V ,
C ISS =1200pF , V TH =0.6V 15.1 19.5 23.8 ms t VDET4*
Output delay time of charge over
current
V DD =3.5V ,
C ISS =1200pF , V TH =0.4V
16.8 21.6 26.4 ms
(Ta = 25o C)
(Continued)
Symbol Item Conditions
MIN
TYP
MAX
Unit
Current Consumption (power-down function enabled)
V DD Operating input voltage V DD - V SS 2.2 6.0
V
I DD Supply
current V DD
= 3.5V,
V-
=0V 1.0 3.0 5.5 μA
I STANDBY Power-down current (power-down
function enabled IC only)
V DD=2.0V, V- floating 0.2 μA
0V battery Charging Function
V0CHA 0 V battery charge starting charger
voltage
0 V battery charging
function “available”
1.0 V
V0INH 0V battery charge inhibition battery
voltage
0 V battery charging
function “unavailable”
(Vcharger=4V~14V)
0.3 V
Output Resistance
R COH CO pin H resistance V CO=3.0V, V DD=3.5V,
V-=0V
- 5 10
KΩ
R COL CO pin L resistance V CO=0.5V, V DD=4.5V,
V-=0V
- 5 10
MΩ
R DOH DO pin H resistance V DO=3.0V, V DD=3.5V,
V-=0V
- 5 10
KΩ
R DOL DO pin L resistance V DO=0.5V, V DD=1.8V,
V-=0V
- 5 10
KΩ
V- internal Resistance
R VMD Internal resistance between V- and
V DD
V DD
= 1.8V,
V-
=0V 100 300 900 KΩ
R VMS Internal resistance between V- and
V SS
V DD
= 3.5V,
V-
= 1.0V 100 200 400 KΩ
*: Please note that a N-channel MOSFET“turning off delay time”will be affected by 1.Input capacitanc
e (C ISS). 2.Gate threshold voltage (V TH); It causes the delay times of overcharge (tV DET1) and charge overcurrent (tV DET4) of 8261 are prolonged approximately “10ms” to turn off the N-channel MOSFETs to cutting off the current flowing path.
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