APPLICATIONS
s High Power Inverters And Choppers s UPS
s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters
FEATURES
s Double Side Cooling s High Surge Capability s High Voltage
VOLTAGE RATINGS
KEY PARAMETERS
V DRM 1400V I T(RMS)1700A I TSM 20000A dV/dt 300V/µs dI/dt 500A/µs t q 40µs
Conditions
V RSM = V RRM + 100V I DRM = I RRM = 60mA at V RRM or V DRM & T vj
Repetitive
Peak Voltages V DRM V RRM
Type Number
140012001000800600
Lower voltage grades available.
TF915 14B TF915 12B TF915 10B TF915 08B TF915 06B
Outline type code: MU169.
See Package Details for further information.
CURRENT RATINGS
Parameter
Conditions
Max.
Units Mean on-state current RMS value
Half sinewave, 50Hz, T case = 80o C Half sinewave, 50Hz, T case = 80o C
10801700
A A
Symbol I T(AV)I T(RMS)
TF915..B
Fast Switching Thyristor
Replaces December 1998 version, DS4279-3.0
DS4279-4.0 January 2000
SURGE RATINGS
Parameter
Conditions
Max.Units I 2t for fusing
10ms half sine; V R = 0% V RRM , T j = 125˚C 20.0kA A 2s
Surge (non-repetitive) on-state current 10ms half sine; V R = 0% V RRM , T j = 125˚C
Symbol I TSM I 2t
2000 x 103
THERMAL AND MECHANICAL DATA
dc Conditions
Min.
Max.Units
o
C/W --Anode dc
Clamping force 23.5kN with mounting compound Thermal resistance - case to heatsink
R th(c-h)
0.006Double side -125o
C T vj Virtual junction temperature
T stg Storage temperature range Reverse (blocking)
Single side
-Thermal resistance - junction to case
R th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
22.3
24.6
tf2okN
-
40150o
C
-On-state (conducting)
-
125
C
-0.012o
C/W
o
C/W Cathode dc
-
-o
C/W Double side cooled
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
DYNAMIC CHARACTERISTICS
V TM Parameter
Symbol Conditions
Maximum on-state voltage At 2000A peak, T case = 25o C I RRM /I DRM Peak reverse and off-state current At V RRM /V DRM , T case = 125o C
微绿球藻Gate source 20V, 20Ω
t r ≤ 0.5µs, T j = 125˚C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V DRM T j = 125o C, Gate open circuit Min.Max.Units - 1.75V -60mA -300V/µs Repetitive 50Hz
-500
A/µs
Non-repetitive
-800A/µs Rate of rise of on-state current
dI/dt
V T(TO)Threshold voltage At T vj = 125o C r T On-state slope resistance At T vj = 125o C
1.25-V -0.25m ΩDelay time t gd 1.5*-µs Total turn-on time t (ON)TOT
3.0*-µs T j = 25˚C, I T = 50A,V D = 300V, I G = 1A,
dI/dt = 50A/µs, dI G /dt = 1A/µs *Typical value.
I H Holding current T j = 25o C, I TM = 1A, V D = 12V 100*-mA T j = 125˚C, I T = 250A, V R = 50V,dV/dt = 20V/µs (Linear to 60% V DRM ),dI R /dt = 50A/µs, Gate open circuit
Turn-off time
t q
40
钛合金
粉末冶金加工
-µs
t q code: B GATE TRIGGER CHARACTERISTICS AND RATINGS
V DRM = 12V, T case = 25o C, R L = 6ΩConditions
Parameter
Symbol V GT Gate trigger voltage V DRM = 12V, T case = 25o C, R L = 6ΩI GT Gate trigger current V GD Gate non-trigger voltage At V DRM T case = 125o C, R L = 1k Ω
- 3.0V -200mA -0.2V Typ.Max.Units V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode
P GM Peak gate power P G(AV)
Mean gate power
- 5.0V -10A -50W -3
W
I L Latching current
T j = 25o C, I G = 0.5A, V D = 12V
300*-mA
CURVES
NOTES:
1. V D ≤ 600V.
2. V R ≤ 10V.
3. R.C Snubber, C = 0.22µF, R =
4.7Ω
NOTES:
1. V D ≤ 600V.
2. V R ≤ 10V.
3. R.C Snubber, C = 0.22µF, R =
4.7Ω
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