M8050贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encap s ulate Transistors ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter

Symbol Test conditions M in M ax Unit Collector-base breakdown voltage

V (BR)CBO I C =100μA, I E =0 40 V Collector-emitter breakdown voltage

变速盘V (BR)CEO * I C =1mA , I B =0 25 V Emitter-base breakdown voltage

V (BR)EBO I E =100μA, I C =0 6 V Collector cut-off current

m型钢

I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off c urrent

管式静态混合器I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C =5mA 45 h FE(2)

V CE =1V, I C =100mA 80 400 DC current gain h FE (3)

V CE =1V, I C =800mA 40 Collector-emitter saturation voltage

V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA 1.2 V

Transition frequency

f T V CE =6V, I C = 20mA , f=30MHz 150 MHz * Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.

CLASSIFICATION OF h FE (2)

Rank L

王水提金H Range 80-300 300-400

BASE

无人机测量B ,Jun ,2011

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AMBIENT TEMPERATURE T

a ()

℃

Typical Characteristics M8050

h ——

B,Jun,2011

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