JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN) FEATURES
z Complementary to MMBT3906
MARKING:1AM MAXIMUM RATINGS (T
a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter
连接扣件Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10µA, I E =0 60 厌氧胶能
用于木材吗
V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 40
V Emitter-base breakdown voltage
V (BR)EBO I E =10µA, I C =0 6 V Collector cut-off current
I CEX V CE =30V, V EB(off)=3V 50 nA Collector cut-off current
I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current
I EBO V EB =5V, I C =0 100 nA h FE(1) V CE =1V, I C =10mA 100 300 h FE(2) V CE =1V, I C =50mA 60 DC current gain
h FE(3)
V CE =1V, I C =100mA 30 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =5mA 0.3 V Base -emitter saturation voltage V BE(sat)
I C =50mA, I B =5mA 0.95 V Transition frequency
f T V CE =20V,I C =10mA, f=100MHz 300 MHz Delay time
t d V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA 35 ns Rise time
t r V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA 35 ns Storage time
t s V CC =3V, I C =10mA, I B1= I B2=1mA 200 ns Fall time t f V CC =3V, I C =10mA, I B1= I B2=1mA 50 ns CLASSIFICATION OF h FE(1)
HFE 100-300 RANK L H RANGE 100–200 200–300
Symbol Parameter Value Unit V CBO
Collector-Base Voltage 60 V V CEO
Collector-Emitter Voltage 40 V V EBO
Emitter-Base Voltage 6 V I C
Collector Current 200 mA P C
Collector Power Dissipation 200 mW R ΘJA
Thermal Resistance From Junction To Ambient 625 ℃/W T j
Junction Temperature 150 ℃ T stg
Storage Temperature -55～+150℃ T OPR Operating Temperature 0～+70 ℃ C,Oct,2012
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100110100
200
30002550751001251500.11101000
80100
h ——I 30
300
C
O L L E C T O R -E M I T T E R S A T U R A T I O N V O
L
T
A
加法器电路G E
V
C
E s
a t
(m
V
)
60033060
T
R
A N S
I T I
O N
导电碳浆
F
R
E Q U
E
N C Y
f T
(M H z )
COLLECTOR CURRENT I C (mA)MMBT3904
Typical Characterisitics AMBIENT TEMPERATURE T a ()
℃3030.3
C O L L E C T O R C U R R E N T I C
(m A )C O L L E C T O R C U R R E N T I C
贴片三极管(m A )
C,Oct,2012
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