7MBR75VN120-50
IGBT Modules
IGBT MODULE (V series)1200V / 75A / PIM
Features
Low V CE (sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
无线开关Maximum Ratings and Characteristics Conditions
Maximum ratings 1200±20
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics (Representative)
Collector - Emitter voltage: V CE [V][ Inverter ]
Dynamic gate charge (typ.)Vcc=600V, Ic=75A,Tj= 25°C
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [200V /d i v ]G a t e - E m i t t e r v o l t a g e : V G E [5V /d i v ]
[ Inverter ]
Gate - Emitter voltage: V GE [V][ Inverter ]
Tj= 25o C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
C o l l e c t o r c u r r e n t : I C [A ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
C o l l e c t o r c u r r e n t : I C [A ]
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25o C / chip
Collector current: I C [A]
Capacitance vs. Collector-Emitter voltage (typ.)
C a p a c i t a n c e : C i e s , C o e s , C r e s [n F ]
Gate charge: Qg [nC]
V GE =0V, f= 1MHz, Tj= 25o C
V GE =15V / chip
C o l l e c t o r c u r r e n t : I C [A ]
Collector-Emitter voltage: V CE [V]
[ Inverter ]
Tj= 150o C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: V CE [V]
0255075100125150
1
2
3
4
电磁炒灶5
V GE =20V
15V
12V
10V
8V
0255075100125150
1
2
3
4
5
15V
12V
10V
8V
V GE =20V
02550751001251500
1
2
3
4
5
Tj=125°C
Tj=25°C
02
4
6
8
5
10
15
20
25
Ic=150A Ic=75A Ic=38A
0.0
0.1
1.0
10.0
100.0
10
20
30
Cies Coes
Cres 0100200300400500600700
V GE
V CE
Tj=150°C
[ Inverter ]
Vcc=600V,VGE=±15V,Rg=2.2Ω,Tj= 150°C
Switching time vs. Collector current (typ.)Collector current: I C [A]
Vcc=600V,Ic=75A,VGE=±15V,Tj= 125°C
S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
Collector current: I C [A]
Switching loss vs. gate resistance (typ.)
S w i t c h i n g l o s s : E o n , E o f f , E r r [m J /p u l s e ]
Collector-Emitter voltage : V CE [V]
Vcc=600V,Ic=75A,VGE=±15V
[ Inverter ]
Switching time vs. Collector current (typ.)Vcc=600V,VGE=±15V,Rg=2.2Ω,Tj= 125°C
Gate resistance : Rg [Ω]
S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
[ Inverter ]
Switching time vs. gate resistance (typ.)S w i t c h i n g t i m e : t o n , t r , t o f f , t f [ n s e c ]
S w i t c h i n g l o s s : E o n , E o f f , E r r [m J /p u l s e ]
Collector current: I C [A]
[ Inverter ] a
Vcc=600V,VGE=±15V,Rg=2.2Ω
Switching loss vs. Collector current (typ.)
储压器
pctiGate resistance : Rg [Ω][ Inverter ]
Reverse bias safe operating area (max.)
[ Inverter ]
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
C o l l e c t o r c u r r e n t : I C [A ]
0255075100125150175
2000
400
800
1200
RBSOA
(Repetitive pulse)
10
100
1000
10000
25
5075100125150175
toff 10
100
1000
10000
25
50
75
100
125
150
toff 10100
1000
10000
0.1
1.0
10.0
100.0
tr
tf
toff
ton 05
10
15
20
25
50
75
100
125
150
175
200
024*********
10
100
ton
tr tf
ton
tr tf
[ Inverter ]
Vcc=600V,VGE=±15V,Rg=2.2Ω
Reverse recovery characteristics (typ.)Forward current : I F [A]
R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]
chip
F o r w a r d c u r r e n t : I F [A ]
Forward on voltage : V F [V]
F o r w a r d c u r r e n t : I F [A ]
Transient thermal resistance (max.)
T h e r m a l r e s i s t a n s e : R t h (j -c ) [ °C /W ]
Temperature [°C ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Forward on voltage : V FM [V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
Pulse width : Pw [sec][ Thermistor ]
Temperature characteristic (typ.)
R e s i s t a n c e : R [k Ω]
02550751001251500
1
2
3
4
5
Tj=125°C
Tj=25°C
10
100
1000
50
ipanel
100
150
200
02550751001251500
1
2
3
4
Tj=125°C
Tj=25°C
0.01
0.10
1.00
10.00
0.001
0.0100.100 1.000
FWD[Inverter]IGBT[Brake]Conv. Diode IGBT[Inverter]
0.1
1
10
100
-60
-40
-20
20
40
60
80
100120140160180
Tj=150°C
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