N-Channel 40-V (D-S) MOSFET
FEATURES
•Halogen-free
•TrenchFET ® Power MOSFET •100 % UIS Tested •100 % R g Tested •
PWM Optimized
APPLICATIONS
•LCD Display Backlight Inverters •DC/DC Converters
PRODUCT SUMMARY
V DS (V)R DS(on) (Ω)I D (A)a
Q g (Typ.)40
0.0088 at V GS = 10 V 5016 nC
0.0105 at V GS = 4.5 V
50
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V DS 40V
Gate-Source Voltage
V GS ± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D
50
a A
T C = 70 °C 44
T A = 25 °C 14b T A = 70 °C 11.2b
Pulsed Drain Current I DM 100
Continuous Source-Drain Diode Current T C = 25 °C I S
40
T A = 25 °C 2.6b
Single Pulse Avalanche Current L = 0.1 mH
I AS 30
Avalanche Energy E AS 45
熔铜炉mJ Maximum Power Dissipation T C = 25 °C P D
48.1W T C = 70 °C 30.8
T A = 25 °C 3.1b T A = 70 °C 2.0b
Operating Junction and Storage T emperature Range T J , T stg - 55 to 150
°C THERMAL RESISTANCE RATINGS
Parameter Symbol T
ypical Maximum Unit
Maximum Junction-to-Ambient b Steady State R thJA 3240
°C/W
Maximum Junction-to-Case Steady State R thJC 2.1 2.6
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter Symbol T est Conditions Min.T
yp.Max.Unit Static
Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA
40
V
V DS Temperature Coefficient ΔV DS /T J I D = 1.0 mA 44mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J - 5.9
Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.0
3.0V Gate-Source Leakage
I GSS V DS = 0 V, V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 40 V , V GS = 0 V 1µA V DS = 40 V, V GS = 0 V , T J = 70 °C
20
On-State Drain Current a
I D(on) V DS ≥ 5 V , V GS = 10 V 50
A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 20 A 0.00690.0088ΩV GS = 4.5
V , I D = 15 A 0.00840.0105
Forward T ransconductance a g fs V DS = 15 V , I D = 15 A
75S
Dynamic b
Input Capacitance C iss V DS = 20 V , V GS = 0 V , f = 1 MHz 2400
pF
Output Capacitance
C oss 260Reverse Transfer Capacitance C rss 100
Total Gate Charge Q g V DS = 20 V , V GS = 10 V , I D = 20 A 3756nC
V DS = 20 V , V GS = 4.5 V , I D = 20 A
1624
服务器
硬件监控
吡咯烷酮羧酸锌Gate-Source Charge Q gs 6.5Gate-Drain Charge Q gd 4.5 Gate Resistance R g f = 1 MHz
2.5
5.58.5Ω
Turn-On Delay Time t d(on) V DD = 20 V , R L = 1 Ω
I D ≅ 20 A, V GEN = 4.5 V , R g = 1 Ω30
45ns
Rise Time
t r 1525Turn-Off Delay Time t d(off) 45
70Fall Time
t f
15
25Turn-On Delay Time t d(on)
V DD = 20 V , R L = 1 Ω
I D ≅ 20 A, V GEN = 10 V , R g = 1 Ω915Rise Time
t r 510Turn-Off Delay Time t d(off) 40
t f 5
10Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C
40A Pulse Diode Forward Current a
I SM 100
Body Diode Voltage
V SD I S = 10 A 0.81 1.2V Body Diode Reverse Recovery Time t rr I F = 20 A, dI/dt = 100 A/µs, T J = 25 °C
2235ns Body Diode Reverse Recovery Charge Q rr 1425nC Reverse Recovery Fall Time t a 11ns
Reverse Recovery Rise Time
t b
Output Characteristics
Transfer Characteristics
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
屋面拉条TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
Single Pulse, Junction-to-Ambient
Source-Drain Diode Forward Voltage Threshold Voltage
Safe Operating Area, Junction-to-Case
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Current Derating*, Junction-to-Case
Power Derating, Junction-to-Ambient Power Derating, Junction-to-Case
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