MPSA44U中文资料

扎带NPN Silicon Epitaxial Planar Transistor

for high voltage switching and amplifier applications.

Absolute Maximum Ratings (T a = 25 O C)

阿比丹艾山Parameter Symbol Value Unit Collector Base Voltage V CBO 500 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 6 V Collector Current I C 300 mA Total Power Dissipation P tot 625 mW

Junction Temperature T J 150 O C

Storage Temperature Range T S

光立方制作- 55 to + 150

硬盘马达C

Characteristics at T a = 25 O C

Parameter

Symbol Min. Max. Unit

DC Current Gain

at I C = 1 mA, V CE = 10 V at I C = 10 mA, V CE = 10 V at I C = 30 mA, V CE = 10 V

h FE

液压静力压桩机

h FE 25 40 40 - - - - - -Collector Cutoff Current at V CB = 400 V

I CBO - 0.1

µA Collector Cutoff Current at V CE = 400 V

I CES - 0.5

µA Emitter Cutoff Current at V EB = 4 V

I EBO - 0.1 µA Collector Base Breakdown Voltage at I C = 100 µA

V (BR)CBO 500 - V Collector Emitter Breakdown Voltage at I C = 1 mA

V (BR)CEO 400 - V Emitter Base Breakdown Voltage at I E = 100 µA

V (BR)EBO 6

- V Collector Emitter Saturation Voltage at I C = 1 mA, I B = 0.1 mA at I C = 10 mA, I B = 1 mA at I C = 50 mA, I B = 5 mA

V CE(sat)时效处理设备

V CE(sat) V CE(sat)

- - -

0.4 0.5 0.75

V V V

Base Emitter Saturation Voltage at I C = 10 mA, I B = 1 mA

V BE(sat) - 0.75 V Collector Output Capacitance at V CB = 20 V, f = 1 MHz

C ob -

7 pF

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