MTA18ASF2G72PDZ-2G3B1

DDR4 SDRAM RDIMM

MTA18ASF2G72PDZ – 16GB Features

电流器•DDR4 functionality and operations supported as defined in the component data sheet

•288-pin, registered dual in-line memory module (RDIMM)

•Fast data transfer rates: PC4-3200, PC4-2933,PC4-2666, or PC4-2400•16GB (2 Gig × 72)•V DD = 1.20V (NOM)•V PP = 2.5V (NOM)•V DDSPD = 2.5V (NOM)

•Supports ECC error detection and correction

•Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

•Low-power auto self refresh (LPASR)•Data bus inversion (DBI) for data bus

•On-die V REFDQ generation and calibration •Dual-rank

•On-board I 2C temperature sensor with integrated serial presence-detect (SPD) EEPROM

•16 internal banks; 4 groups of 4 banks each

•Fixed burst chop (BC) of 4 and burst length (BL) of 8via the mode register set (MRS)组件回收

•Selectable BC4 or BL8 on-the-fly (OTF)•Gold edge contacts •Halogen-free •Fly-by topology

•Terminated control, command, and address bus Figure 1: 288-Pin RDIMM (MO-309, R/C-E1, R/C-E2)

Options

Marking

•Operating temperature

–Commercial (0°C ≤ T OPER ≤ 95°C)None •Package

生姜去皮机–288-pin DIMM (halogen-free)Z •Frequency/CAS latency

雨棚信号灯

pc abs合金

–0.625ns @ CL = 22 (DDR4-3200)-3G2–0.682ns @ CL = 21 (DDR4-2933)-2G9–0.75ns @ CL = 19 (DDR4-2666)-2G6–0.83ns @ CL = 17 (DDR4-2400)

-2G3

Table 1: Key Timing Parameters

Table 1: Key Timing Parameters (Continued)

Note: 1.Down-bin timing, refer to component data sheet Speed Bin Tables for details.

Table 2: Addressing

Table 3: Part Numbers and Timing Parameters – 16GB Modules

Notes: 1.The data sheet for the base device can be found on micron.

2.All part numbers end with a two-place code (not shown) that designates component and PCB revisions.

Consult factory for current revision codes. Example: MTA18ASF2G72PDZ-3G2J3.股骨头仪

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祝您：工作顺利，生活愉快!

以深圳市美光存储技术有限公司提供的参数为例，以下为MTA18ASF2G72PDZ-2G3B1的详细参数，仅供参考

Table 16: DDR4 I DD Specifications and Conditions (0° ≤ T C≤ 85°) – 16GB (Die Revision H)

Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig × 8) compo-

Notes: 1.One module rank in the active I DD/PP, the other rank in I DD2P/PP3N.

2.All ranks in this I DD/PP condition.

3.When T C > 85°C, the I DD and I PP values must be derated. Refer to the base device data

sheet I DD and I PP specification tables for derating values for the applicable die-revision.

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