【WO2019231608A1】BULKLAYERTRANSFERBASEDSWITCHWITHBA

)

发泡聚苯乙烯(

(51)International Patent Classification:

引流袋

ter;5775Morehouse Drive,San Diego,California 92121H01L 29/45(2006.01)H01L 21/74(2006.01)(US).

H01L 21/762(2006.01)H01L 21/768(2006.01)H01L 29/786(2006.01)H01L 23/48(2006.01)(74)Agent:QIU,Xiaotun;5775Morehouse Drive,Attn:

H01L 21/285(2006.01)International IP Administration,San Diego,California 92121-1714(US).(21)International Application Number:

PCT/US2019/030454(81)Designated States (unless otherwise indicated,for every

kind o f national protection av ailable).AE,AG,AL,AM,(22)International Filing Date:

AO,AT,AU,AZ,BA,BB,BG,BH,BN,BR,BW,BY,BZ,02May 2019(02.05.2019)

CA,CH,CL,CN,CO,CR,CU,CZ,DE,DJ,DK,DM,DO,DZ,EC,EE,EG,ES,FI,GB,GD,GE,GH,GM,GT,HN,(25)

合金加工

Filing Language:English HR,HU,ID,IL,IN,IR,IS,JO,JP,KE,KG,KH,KN,KP,(26)Publication Language:English

KR,KW,KZ,LA,LC,LK,LR,LS,LU,LY,MA,MD,ME,MG,MK,MN,MW,MX,MY,MZ,NA,NG,NI,NO,NZ,(30)Priority Data:

OM,PA,PE,PG,PH,PL,PT,QA,RO,RS,RU,RW,SA,15/996,320

水稻脱粒机01June 2018(01.06.2018)

SC,SD,SE,SG,SK,SL,SM,ST,SV,SY,TH,TJ,TM,TN,(71)Applicant:QUALCOMM INCORPORATED [US/US];

TR,TT,TZ,UA,UG,US,UZ,VC,VN,ZA,ZM,ZW.5775Morehouse Drive,Attn:International IP Administra¬(84)Designated States (unless otherwise indicated,for every

tion,San Diego,California 92121-1714(US).kind o f regional protection available).ARIPO (BW,GH,(72)Inventors:GOKTEPELI,Sinan;5775Morehouse Drive,

GM,KE,LR,LS,MW,MZ,NA,RW,SD,SL,ST,SZ,TZ,San Diego,California 92121(US).IMTHURN,George UG,ZM,ZW),Eurasian (AM,AZ,BY,KG,KZ,RU,TJ,Pete;5775Morehouse Drive,San Diego,California 92121TM),European (AL,AT,BE,BG,CH,CY,CZ,DE,DK,(US).VEDULA,Ravi Pramod Kumar;5775Morehouse EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,Drive,San Diego,California 92121(US).CLARKE,Pe¬

MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,

(54)Title:BULK LAYER TRANSFER BASED SWITCH WITH BACKSIDE SILICIDATION

(57)Abstract:A radio frequency integrated circuit switch includes a semiconductor die with a transistor having a gate on a first-side (e.g.,front-side)of the semiconductor die.The semiconductor die may in¬

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三足式离心机k¬

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FIG.5G

[Continued on next page]

W O2019/231608A1 TR),OAPI(BF,BJ,CF,CG,Cl,CM,GA,GN,GQ,GW,

KM,ML,MR,NE,SN,TD,TG).

Declarations under Rule4.17:

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