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®
BTA/BTB08 and T8 Series
SNUBBERLESS ™, LOGIC LEVEL & STANDARD
8A TRIAC S
April 2002 - Ed: 5A
MAIN FEATURES:
DESCRIPTION
Available either in through-hole or surface-mount packages, the BTA/BTB08 and T8 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor or for phase control operation in light dimmers, motor speed controllers,...
The snubberless versions (W and T8series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)Symbol Value Unit I T(RMS)8A V DRM /V RRM 600 and 800V I GT (Q 1)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Value
Unit
I T(RMS)
RMS on-state current (full sine wave)
DP AK / D ²PAK IPAK / TO-220AB Tc = 110°C 8A TO-220AB Ins.
Tc = 100°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 80A
F = 60 Hz
t = 16.7 ms
84I ²t I ²t Value for fusing
tp = 10 ms
36
A ²s dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50A/µs I GM Peak gate current
tp = 20 µs
Tj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C
1W T stg T j
Storage junction temperature range Operating junction temperature range
- 40 to + 150- 40 to + 125
°C
BTA/BTB08 and T8 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
s
STANDARD (4 Quadrants)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1
Symbol Test Conditions
Quadrant
T8BTA/BTB08Unit
T810
T835TW SW CW BW I GT (1)V D = 12 V R L = 30 ΩI - II - III MAX.10
35
510
35
50
mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩTj = 125°C I - II - III
MIN.0.2
V I H (2)I T = 100 mA MAX.153510153550mA I L I G = 1.2 I GT
I - III MAX.
255010255070mA II
306015306080dV/dt (2)V D = 67 %V DRM gate open Tj = 125°C
MIN.4040020404001000V/µs (dI/dt)c (2)
(dV/dt)c = 0.1 V/µs Tj = 125°C MIN.
5.4- 3.5 5.4--A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 2.8- 1.5 2.8--Without snubber Tj = 125°C
- 4.5
-- 4.5
7
Symbol Test Conditions
Quadrant BTA/BTB08Unit
C
B I GT (1)
V D = 12 V R L = 30 Ω
I - II - III IV MAX.2550
50100
mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩTj = 125°C ALL
MIN.0.2
V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GT
I - III - IV
MAX.
4050mA II
80100dV/dt (2)
V D = 67 %V DRM gate open Tj = 125°C
MIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 3.5 A/ms Tj = 125°C
MIN.
510
V/µs
Symbol Test Conditions
Value Unit V TM (2)I TM = 11 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.50m ΩI DRM I RRM
V DRM = V RRM
Tj = 25°C MAX.
5µA Tj = 125°C
1
mA
BTA/BTB08 and T8 Series
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THERMAL RESISTANCES
S = Copper surface under tab
PRODUCT SELECTOR
BTB: non insulated TO-220AB package
Symbol Parameter
Value Unit R th(j-c)
Junction to case (AC)
DPAK / D ²PAK IPAK / TO-220AB 1.6°C/W
TO-220AB Insulated
2.5R th(j-a)
Junction to ambient
S = 1 cm ²D ²PAK 45°C/W
S = 0.5 cm ²
DPAK
70TO-220AB
TO-220AB Insulated
60IPAK
100
Part Number
Voltage (xxx)Sensitivity Type Package 600 V 800 V BTA/BTB08-xxxB X X 50 mA Standard TO-220AB BTA/BTB108-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB08-xxxC X X 25 mA Standard TO-220AB BTA/BTB08-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB08-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB08-xxxTW X X 5 mA Logic level TO-220AB T810-xxxB X X 10 mA Logic level DP AK T810-xxxH X X 10 mA Logic level IP AK T835-xxxB X X 35mA Snubberless DP AK T835-xxxG X X 35 mA Snubberless D ²PAK T835-xxxH
X
X
35 mA
Snubberless
IP AK
BTA/BTB08 and T8 Series
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ORDERING INFORMATION
OTHER INFORMATION
Note: xxx = voltage, yy = sensitivity, z = type
Part Number
Marking
Weight Base quantity Packing mode BTA/BTB08-xxxyz BTA/BTB08xxxyz 2.3 g 250Bulk BTA/BTB08-xxxyzRG BTA/BTB08-xxxyz 2.3 g 50Tube T8yy-xxxB T8yyxxx 0.3 g 75Tube T8yy-xxxB-TR T8yyxxx 0.3 g 2500Tape & reel T8yy-xxxH T8yyxxx 0.4 g 75Tube T8yy-xxxG T8yyxxx 1.5 g 50Tube T8yy-xxxG-TR
T8yyxxx
1.5 g
1000
Tape & reel
BTA/BTB08 and T8 Series
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Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
Fig. 2-1: RMS on-state current versus case temperature (full cycle).
Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle.
Fig. 3: Relative variation of thermal impedance versus pulse duration.
Fig. 4: On-state characteristics (maximum values).
Fig. 5: Surge peak on-state current versus number of cycles.
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Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types
Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
Fig. 10: DP AK and D 2PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness:35µm).
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