HY4903P-HOOYI

Super Low Gate Charge 290A
Pin
Description    Features
•V/R DS(ON)=1.6m Ω (typ.) @ V GS =10V
1
30 Advanced high cell density Trench technology  Excellent CdV/dt effect decline
100% EAS Guaranteed
Halogen - Free Device Available
•••••
G
D
S
TO-220FB-3L
G
D
S
TO-263-2L
Package Code •High Frequency Synchronous Buck
Converters for Computer Processor Power
•High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Applications
N-Channel MOSFET
G
B: TO-263-2L P : TO-220FB-3L B HOOYI HOOYI
HOOYI HY4903
reserves the right to make changes to improve reliability or manufacturability without notice,and advise customers to obtain the latest version of relevant information to verify before placing orders.
Ordering and Marking Information
Note:
lead-free products contain molding compounds/die attach materials and 100%matte tin plate termination finish;which are fully compliant with RoHS.lead-free products meet or exceed the lead-fr
ee requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature.defines “Green”to mean lead-free (RoHS compliant)and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
G : Lead Free Device P
Date Code Assembly Material HOOYI YYXXXJWW G YYXXX WW
HY4903
YYXXXJWW G
150312
2
Absolute Maximum Ratings
Electrical  Characteristics    (T C  =
25°C  Unless  Otherwise  Noted)
Note¡G **  Drain current is limited by junction temperature *** VD=24V
*    Repetitive rating ; pulse width limiited by junction temperature
3
Electrical Characteristics (Cont.)  (T C  = 25
°C Unless Otherwise Noted)
Note * : Pulse test ; pulse width ≤300µs, duty cycle ≤2%..
1004
Typical Operating Characteristics
I D  - D r a i n  C u r r e n t  (A )
Drain Current
50150200250300350Power Dissipation
P t o t  - P o w e r  (W )
50
150200250
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Safe Operation Area
T c -Temperature (°C)
T c -Case Temperature (°C)
Case
1
10
100
V DS -Drain -Source Voltage (V)I D  - D r a i n  C u r r e n t  (A )
5
V DS - Drain-Source Voltage (V)I D  - D r a i n  C u r r e n t  (A )
Output Characteristics
Drain-Source On Resistance
I D - Drain Current (A)
V GS  - Gate - Source Voltage (V)
R D S (O N ) - O n  - R e s i s t a n c e  (m Ω)
T j  - Junction Temperature (°C)
Gate Threshold Voltage
N o r m a l i z e d  T h r e s h o l d  V l o t a g e
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance 0
80400480560640
2345
678

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