专利名称：WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS
发明人：Masayuki Kanazawa,Tomoo
Hayashi,Shigeharu Arisa
申请号：US12332730
申请日：20081211
公开号：US20090246955A1
公开日：
20091001
专利附图：
摘要：A wafer processing method is provided comprising the steps of: holding a wafer
() having devices formed on its front surface () so that a back surface () of the wafer is
exposed; grinding the back surface of the wafer to form a brittle fracture layer (Z) on the back surface; and polishing the back surface of the wafer entirely so that the brittle fracture layer remains partially. It is possible to improve the strength of the wafer and reduce its surface roughness while allowing utilization of a gettering effect. It is also preferable to remove only an outermost layer of the back surface of the wafer. Further, it is preferable that the wafer is polished by at least one of wet polishing, dry polishing, wet etching and dry etching.
申请人：Masayuki Kanazawa,Tomoo Hayashi,Shigeharu Arisa
地址：Tokyo JP,Tokyo JP,Tokyo JP
国籍：JP,JP,JP
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