专利名称：SEED LAYERS FOR INTERCONNECTS AND METHODS AND APPARATUS FOR THEIR FABRICATION
发明人：COHEN, Uri
申请号：US2000040983
申请日：20000925
公开号：WO01/026145P1
公开日：
20010412
摘要：One embodiment of the present invention is a method for making metallic interconnects including: (a) forming a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) depositing a barrier layer over the field and inside surfaces of the at least one opening; (c) depositing a first seed layer over the barrier layer using a first deposition technique; (d) depositing a second seed layer over the first seed layer using a second deposition technique, the first and second deposition techniques being different; and (e) electroplating a metallic layer over the second seed layer, the electroplated metallic layer including a material selected from a group consisting of Cu, Ag, or alloys including one or more of these metals.
申请人：COHEN, Uri
地址：US
国籍：US
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