INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
• Benchmark Efficiency Above 20KHz
• Optimized for Welding, UPS, and Induction Heating
Applications
• Rugged with UltraFast Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer Leads for Easier Mounting
• UltraFast Non Punch Through (NPT)
Technology
• Low Diode V F (1.67V Typical @ 20A & 25°C)
声波识别• 10 µs Short Circuit Capability
• Square RBSOA
• UltraSoft Diode Recovery Characteristics
• Positive V CE(on) Temperature Coefficient
马弗罐
• Extended Lead TO-247AD Package Absolute Maximum Ratings
出货管理系统Thermal Resistance
Parameter Min.Typ.Max.Units R θJC
电镀
铜包钢Junction-to-Case - IGBT ––––––0.42R θJCJunction-to-Case - Diode ––––––0.83°C/W R θCS
Case-to-Sink, flat, greased surface –––0.24–––R θJA
Junction-to-Ambient, typical socket mount ––––––40W t
Weight ––– 6 (0.21)–––g (oz)
Z θJC Transient Thermal Impedance Junction-to-Case (Fig.24)12/14/99
IRGP20B120UD-E
UltraFast CoPack IGBT PD- 93817
www.irf 1
Parameter Max.Units V CES
Collector-to-Emitter Breakdown Voltage 1200V I C @ T C = 25°C
Continuous Collector Current (Fig.1)40I C @ T C = 100°C
Continuous Collector Current (Fig.1)20I CM
Pulsed Collector Current (Fig.3, Fig. CT.5)120I LM
Clamped Inductive Load Current (Fig.4, Fig. CT.2)120 A I F @ T C = 100°C
Diode Continuous Forward Current 20I FM
Diode Maximum Forward Current 120V GE
tf2oGate-to-Emitter Voltage ± 20 V P D @ T C = 25°C
Maximum Power Dissipation (Fig.2)300P D @ T C = 100°C
Maximum Power Dissipation (Fig.2)120T J
Operating Junction and -55 to + 150T STG Storage Temperature Range
涂锡焊带Soldering Temperature, for 10 seconds
300, (0.063 in. (1.6mm) from case)°C
Mounting Torque, 6-32 or M3 screw.10 lbf•in (1.1N•m)W
IRGP20B120UD-E
IRGP20B120UD-E
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