JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
贴片三极管SOT-89-3L Plastic-Encapsulate Transistors
2SC2383
TRANSISTOR (NPN) FEATURE z High voltage: V CEO =160V z Large continuous collector current capability
MARKING ：2383
MAXIMUM RATINGS (T A =25 unless otherwise noted ℃) Symbol Parameter Value Unit V CBO
Collector-Base Voltage 160 V V CEO
Collector-Emitter Voltage 160 V V EBO
Emitter-Base Voltage 6 V I C
Collector Current -Continuous 1 A P C
Collector Power Dissipation 0.5 W T J
Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter
Symbol Test conditions M in M ax U nit Collector-base breakdown voltage
V (BR)CBO I C = 100μA , I E =0 160 V Collector-emitter breakdown voltage
V (BR)CEO * I C = 10mA, I B =
0 160 V Emitter-base breakdown voltage
V (BR)EBO I E = 10μA, I C =0 6 V Collector cut-off current
I CBO V CB =150V, I E =0 1 μA Emitter cut-off current
I EBO V EB =6V, I C =0 1 μA DC current gain
h FE V CE =5V, I C =
200mA 100 320 Collector-emitter saturation voltage
V CE(sat) I C =500m A, I B =
50mA 1 V Base-emitter voltage
V BE I C =5mA, V CE = 5V 0.45 0.75 V Transition frequency
f T V CE =5V, I C =200mA 20 MHz Collector output capacitance
C ob V CB =10V,I E =0,f =1MHz 20 pF *pulse test
CLASSIFICATION OF h FE
Rank
O Y Range 100-200 160-320
SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER离子
风机aryang
B,May,2013
www.nscn宝石饰品
【南京南山半导体有限公司 — 长电贴片三极管选型资料】 游梁式抽油机
200
400600
800
10000.11101
10
10010000
50100
150200250300
B A S E -E M I T T E R S A T U R A T I O N V
O
L T
脱硫装置A
G E
V B
E s
a t
(m V
)
AMBIENT TEMPERATURE T a ()℃ 2SC2383
Typical Characteristics I h —— REVERSE VOLTAGE V (V)C
A P A C I T A
覆盖膜N C E C (p
F )
C
O L L E C T O R C U R R
E N T I C
(m A )Static Characteristic C O L L E C T O R C U R R E N T I C
(m A )
B,May,2013
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