Document Number: 89124For technical questions within your region, please contact one of the following:www.vishay Revision: 19-Apr-11
DiodesAmericas@vishay , DiodesAsia@vishay , DiodesEurope@vishay 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay/doc?91000Surface Mount Ultrafast Rectifiers
MUH1PB thru MUH1PD
Vishay General Semiconductor
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for ultrafast switching speeds AC/AC and DC/DC converters.移动式卫生间
FEATURES
•Very low profile - typical height of 0.65 mm •Ideal for automated placement •Oxide planar chip junction
•Low forward voltage drop, low power losses •Ultrafast recovery times for high frequency
•Meets MSL level 1, per J-STD-020C,LF maximum peak of 260 °C •AEC-Q101 qualified
•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoH S compliant, and commercial grade
Base P/NH M3 - halogen-free, RoH S compliant, and automotive grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I F(AV) 1.0 A
V RRM 100 V, 150 V, 200 V
I FSM 10 A t
rr
25 ns V F at I F = 1.0 A
0.82 V I R 1 μA T J max.
175 °C
MicroSMP
eSMP
® Series
Top View Bottom View
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER SYMBOL
MUH1PB MUH1PC MUH1PD UNIT
Device marking code
HB HC HD Maximum repetitive peak reverse voltage V RRM 100
150200
V Maximum average forward rectified current (fig. 1)I F(AV) 1.0A Peak forward surge current 10 ms single half sine-wave superimposed on rated load
I FSM 10A Operating junction and storage temperature range
T J , T STG - 55 to + 175
°C oneic/
www.vishay For technical questions within your region, please contact one of the following:Document Number: 891242
DiodesAmericas@vishay , DiodesAsia@vishay , DiodesEurope@vishay Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay/doc?91000MUH1PB thru MUH1PD
Vishay General Semiconductor
Notes
(1)Pulse test: 300 μs pulse width, 1 % duty cycle (2)Pulse test: Pulse width ≤ 40 ms
Note
(1)Free air, mounted on recommended copper pad area. Thermal resistance R θJA - from junction to ambient, R θJM - and junction to mount
Note
(1)Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(T A = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
水喷嘴SYMBOLjapanese tecther2
TYP.MAX.UNIT
Maximum instantaneous forward voltage
I F = 0.5 A
T A = 25 °C
V F (1)
0.90-V I F = 1.0 A 1.0 1.05I F = 0.5 A T A = 125 °C 0.72-I F = 1.0 A陶瓷过滤器
0.820.90Maximum reverse current Rated V R
T A = 25 °C I R (2)- 1.0μA T A = 125 °C 3.015Maximum reverse recovery time I F = 0.5 A, I R = 1.0 A,I rr = 0.25 A
T A = 25 °C
t rr
19
25
ns Typical reverse recovery time I F = 1.0 A, dI/dt = 50 A/μs, V R = 30 V, I rr = 0.1 I RM 29
40Typical softness factor (t b /t a )I F = 1.0 A, dI/dt = 200 A/μs,
V R = 200 V T A = 125 °C
S
0.5-Typical reverse recovery current I RM 3.4 4.6A Typical stored charge Q rr 45-nC Typical junction capacitance
4.0 V, 1 MHz
10
-pF
THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER SYMBOL M U H1PB M U H1PC M U H1PD U NIT
Typical thermal resistance
R θJA (1)166°C/W
R θJM (1)
40
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUH1PD-M3/89A 0.00689A 45007" diameter plastic tape and reel MUH1PDHM3/89A (1)0.006
89A
4500
7" diameter plastic tape and reel
oneic/
Document Number: 89124For technical questions within your region, please contact one of the following:www.vishay Revision: 19-Apr-11
DiodesAmericas@vishay , DiodesAsia@vishay , DiodesEurope@vishay 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay/doc?91000MUH1PB thru MUH1PD
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
oneic/
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Revision: 12-Mar-121Document Number: 91000 oneic/
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