low conduction loss as well as short circuit ruggedness.
Absolute Maximum Ratings T C=25℃ unless otherwise noted
Symbol Description GD150FFT120C6S Units V CES Collector-Emitter V oltage 1200 V V GES Gate-Emitter V oltage ±20 V
I C Collector Current @ T C=25℃
@ T C=80℃
260
150
A
I CM(1)Pulsed Collector Current @ T C=80℃300 A
I F Diode Continuous Forward Current 150 A
I FM Diode Maximum Forward Current 300 A
P D Maximum power Dissipation @ T j=150℃789 W
T SC Short Circuit Withstand Time @ T j=150℃10 μs
T j Maximum Junction Temperature 175 ℃
T STG Storage Temperature Range -40 to +125 ℃
V ISO Isolation V oltage RMS,f=50Hz,t=1min 2500 V Mounting
Torque
Mounting Screw:M5 3.0 to 6.0 N.m Notes:
(1)Repetitive rating: Pulse width limited by max. junction temperature
Electrical Characteristics of IGBT T C=25℃ unless otherwise noted
Off Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
V(BR)CES Collector-Emitter
Breakdown V oltage
T j=25℃1200 V
I CES Collector Cut-Off Current V CE=V CES,V GE=0V,
T j=25℃
5.0 mA
I GES Gate-Emitter Leakage
Current
V GE=V GES,V CE=0V,
T j=25℃
400 nA
On Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
V GE(th)Gate-Emitter Threshold
V oltage
I C=7.0mA,V CE=V GE,
T j=25℃
5.0 5.9 7.5 V
V CE(sat)Collector to Emitter
Saturation V oltage
I C=150A,V GE=15V,
T j=25℃
1.95
2.25
V
I C=150A,V GE=15V,
T j=125℃
2.38
Switching Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
t d(on)Turn-On Delay Time
V CC=600V,I C=150A,
R G=5.1Ω,V GE=±15V,
T j=25℃220 ns
s1200
t r Rise Time 75 ns t d(off)Turn-Off Delay Time 364 ns t f Fall Time 146 ns
E on Turn-On Switching
Loss
7.2 mJ
E off Turn-Off Switching
Loss
9.0 mJ
t d(on)Turn-On Delay Time
V CC=600V,I C=150A,
R G=5.1Ω,V GE=±15V,
T j=125℃245 ns
t r Rise Time 78 ns t d(off)Turn-Off Delay Time 385 ns t f Fall Time 182 ns
E on Turn-On Switching
Loss
11.0 mJ
E off Turn-Off Switching
Loss
12.2 mJ
C ies Input Capacitance
V CE=30V,f=1MHz,
V GE=0V 17.9 nF
C oes Output Capacitance 0.67 nF
C res Reverse Transfer
Capacitance
0.49 nF
I SC SC Data T P≤10μs,V GE=15V,
T j=125℃,V CC=900V,
V CEM≤1200V
TBD A
L CE Stray Inductance 21 nH
R CC’+EE’Module Lead Resistance,
Terminal To Chip
1.80 mΩ
Electrical Characteristics of DIODE T C=25℃ unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units
V F Diode Forward
V oltage
I F=150A
T j=25℃ 1.80 2.25
V
T j=125℃ 1.85
Q r Recovered charge
I F=150A,
V R=600V,
di/dt=-2068A/μs,
V GE=-15V T j=25℃13.7
μC T j=125℃25.4
I RM Peak Reverse
Recovery Current
T j=25℃139
A
T j=125℃159
E rec Reverse Recovery
Energy
T j=25℃7.3
mJ
T j=125℃14.2
Electrical Characteristics of NTC T C=25℃ unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units R25Rated Resistance 5.0 kΩ∆R/R Deviation of R100R100=493.3Ω-5 5 % P25Power Dissipation 20.0 mW
B25/50B-value R2=R25exp[B25/50(1/T2-1/(298.1
5K))]
3375 K
Thermal Characteristics
Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (per IGBT) 0.19 K/W RθJC Junction-to-Case (per DIODE) 0.28 K/W RθCS Case-to-Sink (Conductive grease applied) 0.009 K/W Weight Weight of Module 300 g
Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics Fig 3. IGBT Switching Loss vs. I C Fig 4. IGBT Switching Loss vs. R G
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