Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures 期刊名称： ACS Photonics
折叠音箱
作者： Young-Ho,Ko,Je-Hyung,Kim,Su-Hyun,Gong,Joosung,Kim,Taek,Kim,Yong-Hoon,Cho
作者机构： Departmentmlh
年份： 2015年
交通警示柱期号： 第4期
二维力传感器
关键词： InGaN;nanopyramid structure;red emission;heterostructure;light-
平板电脑手机emitting diode;
风力发电汽车
摘要：We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and successfully demonstrated efficient red color emission at 650 nm from this unique structure. The nanosized pyramid structure was fabricated by selective area growth method with nanoimprint. The diff
erent diffusion length of composite atoms and compositional pulling effect on the pyramid structure gave rise to not only compositional variation, but also high In-content InGaN of more than 40%. The InGaN DHS on nanopyramids shows high internal quantum efficiency, sub-ns fast recombination time (negligible built-in electric fields), and less efficiency droop even with the high In content. These results are important to realize efficient red emission based on InGaN material, providing possibilities for efficient photonic devices operating at
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议