2SP0115T2Ax-12
Preliminary Data Sheet
Compact, high-performance, plug-and-play dual-channel IGBT driver based on SCALE-2 technology for individual and parallel-connected modules
Abstract
The SCALE-2 plug-and-play driver 2SP0115T2Ax-12 is a compact dual-channel intelligent gate driver designed
for 1200V 17mm dual IGBT modules. The driver features an electrical interface with a built-in DC/DC power
supply.
The turn-on and turn-off gate resistors of both channels are not assembled in order to provide maximum flexibility. They must be assembled by the user before start of operation. Please refer to
机械臂the paragraph on “Gate Resistor Assembly” for the recommended gate resistors.
For drivers adapted to other types of high-power and high-voltage IGBT modules, refer to
www.IGBT-Driver/go/plug-and-play
Features Applications
[ Plug-and-play solution
[ Allows parallel connection of IGBT modules [ Shortens application development time [ Extremely reliable; long service life [ Built-in DC/DC power supply
[ 20-pin flat cable interface
[ Duty 100%
[ Active clamping of V ce at turn-off
[ IGBT short-circuit protection
[ Monitoring of supply voltage
[ Safe isolation to EN 50178
[ UL compliant
[ Suitable for 1200V 17mm dual IGBT modules [ Wind-power converters [ Industrial drives
[ UPShtc a310
[ Power-factor correctors [ Traction
[ Railroad power supplies [ Welding
[ SMPS
[ Radiology and laser technology [ Research
[ and many others
Preliminary Data Sheet
Safety Notice!
The data contained in this data sheet is intended exclusively for technically trained staff. Handling all high-
voltage equipment involves risk to life. Strict compliance with the respective safety regulations is mandatory!
Any handling of electronic devices is subject to the general specifications for protecting electrostatic-sensitive
devices according to international standard IEC 60747-1, Chapter IX or European standard EN 100015 (i.e. the
workplace, tools, etc. must comply with these standards). Otherwise, this product may be damaged.
Important Product Documentation
This data sheet contains only product-specific data. For a detailed description, must-read application notes and
common data that apply to the whole series, please refer to “Description & Application Manual for 2SP0115T
SCALE-2 IGBT Drivers” on www.IGBT-Driver/go/2SP0115T.
The gate resistors on this gate driver are not assembled in order to provide maximum flexibility. For the gate
resistors required for specific IGBT modules, refer to the paragraph on “Gate Resistor Assembly”. Use of gate
resistors other than those specified may result in failure.
Mechanical Dimensions
Dimensions: See “Description & Application Manual for 2SP0115T SCALE-2 IGBT Drivers”
Mounting principle: Soldered onto 17mm dual IGBT module
Absolute Maximum Ratings
Unit
Max Parameter Remarks Min
Supply voltage V CC VCC to GND 0 16 V
eee17
Logic input and output voltages To GND -0.5 VCC+0.5 V
SO x current Fault condition, total current 20 mA
A
+15
Gate peak current I out Note
1 -8
mA
2 290
Average supply current I CC Note
Output power per gate Ambient temperature <70°C (Note 3) 1.2 W
Ambient temperature 85°C (Note 3) 1 W
Turn-on gate resistance Note 16 1.3 Ω
Turn-off gate resistance Note 16 1.8 Ω
Switching frequency F Note 21 n.d. kHz
Test voltage (50Hz/1min.) Primary to secondary (Note 17) 3800 V AC(eff)
Secondary to secondary (Note 17) 3800 V AC(eff)
DC-link voltage Note 4 800 V
|dV/dt| Rate of change of input to output voltage (Note 5) 50 kV/μs
Preliminary Data Sheet
Unit Parameter Remarks Min
Max Operating voltage Primary/secondary, secondary/secondary 1200 V peak
Operating temperature Note 20 -20 +85 °C
Storage temperature -40 +90 °C Recommended Operating Conditions
Unit
Max Parameter Remarks Min
Typ
V
15
15.5
Supply voltage V CC To
GND 14.5
Resistance from TB to GND Blocking time≠0, ext. value 128 ∞kΩ
SO x current Fault condition, 3.3V logic 4 mA
Electrical Characteristics
Power Supply Remarks Min Typ Max Unit
load 33 mA
Supply current I CC Without
Efficiency ηInternal DC/DC converter 85 %
Coupling capacitance C io Primary side to secondary side, total, per channel 23 pF
Power Supply Monitoring Remarks Min Typ Max Unit
Supply threshold V CC Primary side, clear fault 11.9 12.6 13.3 V
Primary side, set fault (Note 6) 11.3 12.0 12.7 V
Monitoring hysteresis Primary side, set/clear fault 0.35 V
Supply threshold V isox-V eex Secondary side, clear fault 12.1 12.6 13.1 V
Secondary side, set fault (Note 7) 11.5 12.0 12.5 V
Monitoring hysteresis Secondary side, set/clear fault 0.35 V
Supply threshold V eex-V COMx Secondary side, clear fault 5 5.15 5.3 V
Secondary side, set fault (Note 7) 4.7 4.85 5 V
Monitoring hysteresis Secondary side, set/clear fault 0.15 V
Logic Inputs and Outputs Remarks Min Typ Max Unit
Input impedance V(INx) > 3V (Note 8) 3.5 4.1 4.6 kΩ
Turn-on threshold V(INx) (Note 9) 2.6 V
Turn-off threshold V(INx) (Note 9) 1.3 V
SOx output voltage Fault condition, I(SOx)<8mA 0.7 V
Short-circuit Protection Remarks Min Typ Max Unit
Vce-monitoring threshold Between auxiliary terminals 10.2 V
Response time DC-link voltage > 550V (Note 10) 5.4 μs
Preliminary Data Sheet
Short-circuit Protection Remarks Min Typ Max Unit
Delay to IGBT turn-off After the response time (Note 11) 1.4 μs
Blocking time After fault (Note 12) 90 ms
Timing Characteristics Remarks Min Typ Max Unit
Turn-on delay t d(on)Note
13 75 ns
13 65 ns
Turn-off delay t d(off)Note
Jitter of turn-on delay Note 19 ±2 ns
Jitter of turn-off delay Note 19 ±4 ns
Output rise time t r(out)G x to E x (Note 14) 5 ns
Output fall time t f(out)G x to E x (Note 14) 10 ns
Dead time between outputs Half-bridge mode 3 μs
Jitter of dead time Half-bridge mode ±50 ns
Transmission delay of fault state Note 15 400 ns
Unit
Max Outputs Remarks Min
Typ
Turn-on gate resistor R g(on)Note 16 not assembled Ω
Turn-off gate resistor R g(off)Note 16 not assembled Ω
Gate voltage at turn-on 15 V
Gate-voltage at turn-off P = 0W -9.2 V
P = 1.2W -7.1 V
Gate resistance to COMx 4.7 kΩ
Electrical Isolation Remarks Min Typ Max Unit
Test voltage (50Hz/1s) Primary to secondary side (Note 17) 3800 3850 3900 V eff蚀刻刀模 Secondary to secondary side (Note 17) 3800 3850 3900 V eff
Partial discharge extinction volt. Primary to secondary side (Note 18) 1220 V peak
Secondary to secondary side (Note 18) 1200 V peak
Creepage distance Primary to secondary side 12.6 mm
Secondary to secondary side 6.6 mm
Primary to NTC 6.5 mm
Clearance distance Primary to secondary side 12.3 mm
Secondary to secondary side 6.6 mm
Primary to NTC 6.5 mm
All data refer to +25°C and V CC = 15V unless otherwise specified
Footnotes to the Key Data
1) The gate current is limited by the gate resistors located on the driver.
机电在线2) If the specified value is exceeded, this indicates a driver overload. It should be noted that the driver is
not protected against overload.
验证码自动输入3) If the specified value is exceeded, this indicates a driver overload. It should be noted that the driver is
not protected against overload. From 70°C to 85°C, the maximum permissible output power can be
linearly interpolated from the given data.
Preliminary Data Sheet 4) This limit is due to active clamping. Refer to the “Description & Application Manual for 2SP0115T
SCALE-2 IGBT Drivers”.
5) This specification guarantees that the drive information will be transferred reliably even at a high DC-
link voltage and with ultra-fast switching operations.
6) Undervoltage monitoring of the primary-side supply voltage (VCC to GND). If the voltage drops below
this limit, a fault is transmitted to the corresponding outputs and the IGBTs are switched off.
7) Undervoltage monitoring of the secondary-side supply voltage (Visox to Veex and Veex to COMx
which correspond with the approximate turn-on and turn-off gate-emitter voltages). If the corresponding voltage drops below this limit, the IGBT is switched off and a fault is transmitted to the corresponding output.
8) The input impedance can be modified to values < 18 kΩ (customer-specific solution).
9) Turn-on and turn-off threshold values can be increased (customer-specific solution).
10) The resulting pulse width of the direct output of the gate drive unit for short-circuit type I (excluding
the delay of the gate resistors) is the sum of response time plus delay to IGBT turn-off.
11) The turn-off event of the IGBT is delayed by the specified time after the response time.
12) Factory set value. The blocking time can be reduced with an external resistor. Refer to the
“Description & Application Manual for 2SP0115T SCALE-2 IGBT Drivers”.
13) Measured from the transition of the turn-on or turn-off command at the driver input to direct output
of the gate drive unit (excluding the delay of the gate resistors).
14) Output rise and fall times are measured between 10% and 90% of the nominal output swing with an
output load of 10Ω and 40nF. The values are given for the driver side of the gate resistors. The time constant of the output load in conjunction with the present gate resistors leads to an additional delay at the load side of the gate resistors.
15) Transmission delay of the fault state from the secondary side to the primary status outputs.
16) The gate resistors are not assembled on this IGBT gate driver. They must be assembled by the user
according to the paragraph on “Gate Resistor Assembly”.
17) HiPot testing (= dielectric testing) must generally be restricted to suitable components. This gate
driver is suited for HiPot testing. Nevertheless, it is strongly recommended to limit the testing time to 1s slots as stipulated by EN 50178. Excessive HiPot testing at voltages much higher than 850V AC(eff) may lead to insulation degradation. No degradation has been observed over 1min. testing at 3800V AC(eff). Every production sample shipped to customers has undergone 100% testing at the given value or higher (<5100V eff) for 1s.
18) Partial discharge measurement is performed in accordance with IEC 60270 and isolation coordination
specified in EN 50178. The partial discharge extinction voltage between primary and either secondary side is coordinated for safe isolation to EN 50178.
19) Jitter measurements are performed with input signals INx switching between 0V and 15V referred to
GND, with a corresponding rise time and fall time of 8ns.
20) A version with extended operating temperature range of –40°C…85°C (2SP0115T2B0) can also be
supplied.
21) The maximum switching frequency is not defined, as it depends on the IGBT module used. Please
consult the corresponding driver data sheet for more information.
Preliminary Data Sheet
Gate Resistor Assembly
The turn-on and turn-off gate resistors of 2SP0115T drivers are adapted to their respective IGBT modules. Recommended gate resistors are: PR02 / 2W / 5% from Vishay.
The following versions exist:
1200V IGBT Type Rg,on (R120/R220) Rg,off (R122/R222)
FF150R12ME3G 8.2Ω 8.2Ω
CM200DX-24S 1.3Ω 1.8Ω
FF225R12ME4 1.6Ω 2.4Ω
2MBI225VN-120-50 1.6Ω 2.4Ω
FF300R12ME3 2.4Ω 3.3Ω
FF300R12ME4 1.3Ω 1.8Ω
2MBI300VN-120-50 1.3Ω 1.8Ω
FF450R12ME3 1.6Ω 2.4Ω
FF450R12ME4 1.3Ω 1.8Ω
2MBI450VN-120-50 1.3Ω 1.8Ω
FF600R12ME4 1.5Ω 2.4Ω
2MBI600VN-120-50 1.5Ω 2.4Ω
For the component position, refer to Fig. 1.
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