©2005 Fairchild Semiconductor Corporation
www.fairchildsemi
Rev.1.0.5
Features
•Internal Avalanche Rugged Sense FET
•Advanced Burst-Mode operation consumes under 1 W at 240V AC & 0.5W load
•Precision Fixed Operating Frequency (66kHz)•Internal Start-up Circuit
•Improved Pulse by Pulse Current Limiting •Over V oltage Protection (OVP)•Over Load Protection (OLP)
•Internal Thermal Shutdown Function (TSD)•Auto-Restart Mode
•Under V oltage Lock Out (UVLO) with hysteresis •Low Operating Current (2.5mA)•Built-in Soft Start
Application
•SMPS for LCD monitor and STB •Adaptor
Description
The FSDM0565RB is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS)with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized g
ate driver, internal soft start,temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform well suited for cost effective designs of flyback converters.
Table 1. Maximum Output Power
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter measured at 50°C ambient.
2. Maximum practical continuous power in an open frame
design at 50°C ambient.
3. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
OUTPUT POWER TABLE
PRODUCT 230VAC ±15%(3)
85-265VAC Adapt-er (1)Open Frame (2)Adapt-er (1)Open Frame (2)FSDM0565RB 60W 70W 50W 60W FSDM0565RBI 60W 70W 50W 60W FSDM07652RB
70W
80W
60W
70W
FSDM0565RB
Green Mode Fairchild Power Switch (FPS TM )
FSDM0565RB
Internal Block Diagram
Figure 2.Functional Block Diagram of FSDM0565RB 2
FSDM0565RB
3
Pin Definitions
Pin Configuration
Figure 3.Pin Configuration (Top View)
WWW.02245.INFOPin Number
Pin Name Pin Function Description
1Drain This pin is the high voltage power Sense FET drain. It is designed to drive the transformer directly.
2GND This pin is the control ground and the Sense FET source.
3
Vcc
This pin is the positive supply voltage input. During start up, the power is sup-plied by an internal high voltage current source that is connected to the Vstr pin.When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from the auxiliary transformer winding.
4Vfb
This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6.0V, the over load protection is activated resulting in shutdown of the FPS TM .5N.C -6
Vstr
This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external ca-
pacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal cur-rent source is disabled.
FSDM0565RB
4
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=14mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
Thermal Impedance
Notes:
1. Free standing with no heat-sink under natural convection.
2. Infinite cooling condition - Refer to the SEMI G30-88.
Parameter
Symbol Value Unit Drain-source voltage V DSS 650V Vstr Max Voltage
V STR 650V Pulsed Drain current (Tc=25°C)(1)I DM 11A DC Continuous Drain Current(Tc=25°C)I D
2.8A Continuous Drain Current(Tc=100°C) 1.7A Single pulsed avalanche energy (2)E AS 190mJ Single pulsed avalanche current (3)I AS -A Supply voltage V CC 20V Input voltage range
V FB -0.3 to V CC V
Total power dissipation(Tc=25°C)P D (Watt H/S)
45
(TO-220-6L)W
75
(I2-PAK-6L)Operating junction temperature T j Internally limited °C Operating ambient temperature T A -25 to +85°C Storage temperature range
T STG
-55 to +150°C ESD Capability, HBM Model (All pins excepts for Vstr and Vfb)
- 2.0
(GND-Vstr/Vfb=1.5kV)kV ESD Capability, Machine Model (All pins excepts for Vstr and Vfb)
-
300
手指假肢
(GND-Vstr/Vfb=225V)
V
Parameter
Symbol
Package Value Unit Junction-to-Ambient Thermal θJA (1)TO-220-6L 49.90°C/W I2-PAK-6L 30Junction-to-Case Thermal
θJC (2)
TO-220-6L 2.78°C/W
I2-PAK-6L
1.67
FSDM0565RB
5
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Parameter Symbol Condition Min.Typ.
Max.Unit
Sense FET SECTION
Drain source breakdown voltage
BV DSS V GS = 0V, I D = 250µA 650--V Zero gate voltage drain current I DSS V DS = 650V, V GS = 0V
--500µA V DS = 520V
自动投篮机
V GS = 0V, T C = 125°C --500µA
Static drain source on resistance (1)R DS(ON)V GS = 10V, I D = 2.5A - 1.76 2.2Ω
Output capacitance C OSS V GS = 0V, V DS = 25V,f = 1MHz
-78-pF
Turn on delay time T D(ON)V DD = 325V, I D = 5A (MOSFET switching time is essentially independent of
递进式分配器
operating temperature)
-22-ns Rise time
T R -52-Turn off delay time T D(OFF)-95-Fall time
T F
-50
-
CONTROL SECTION Initial frequency F OSC V FB = 3V 606672kHz Voltage stability F STABLE 13V ≤ Vcc ≤ 18V 013%Temperature stability (2)∆F OSC -25°C ≤ Ta ≤ 85°C
0±5±10%Maximum duty cycle D MAX -778287%Minimum duty cycle D MIN ---0%Start threshold voltage V START V FB =GND 111213V Stop threshold voltage V STOP V FB =GND 789V Feedback source current I FB V FB =GND 0.70.9 1.1mA Soft-start time
T S Vfb=3
-1015ms Leading Edge Blanking time T LEB
--250
-ns
BURST MODE SECTION Burst Mode Voltages (2)V BURH Vcc=14V -0.7-V V BURL
Vcc=14V
-0.5
-
V
PROTECTION SECTION Peak current limit (4)I OVER V FB =5V, V CC =14V
2.0 2.25 2.5A Over voltage protection
V OVP -181920V Thermal shutdown temperature (2)T SD 130145160°C Shutdown feedback voltage V SD V FB ≥ 5.5V 5.5 6.0 6.5V Shutdown delay current
I DELAY
V FB =5V
2.8
3.5
4.2
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