等电位端子箱专利名称：GaN HBT superlattice base structure 发明人：Wojtowicz, Michael
申请号：EP02008132.9
申请日：20020411
公开号：EP1249872A2
公开日：
20021016半桥驱动器
后视镜套
专利附图：
摘要：A heterojunction bipolar transistor (HBT) (20) with alternating layers of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) with varying Al composition forming a graded superlattice structure in the base layer (28) includes. The thin layers of AIGaN in the base layer (28) increases the base p-type carrier concentration. Grading of the Al
composition in the thin AlGaN layers induces an electrostatic field across the base layer (28) that increases the carrier velocity and reduces the carrier transit time. The structure thus decreases the transit time and at the same time increases the p-type carrier concentration to improve the operating efficiency of the device.
钢领圈申请人：TRW Inc.
地址：One Space Park Redondo Beach, California 90278 US
国籍：US
水泥装袋机代理机构：Schmidt, Steffen J., Dipl.-Ing.
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