DRV8833
ZHCS016B–JANUARY2011–REVISED AUGUST2011
插座保护盖查询样品:DRV8833
•双通道H桥电流控制电机驱动器
–能够驱动两个直流(DC)电机或一个步进电机
应用
–低MOSFET导通电阻
•电池供电式玩具
HS+LS360mΩ
•POS打印机
•每个H桥的输出电流为1.5-A RMS、2APP（在
V M=5V和25℃条件下）•视频安保摄像机
•产品可以为3-A RMS，•办公自动化设备
4-A平行峰顶•游戏机
•宽电源电压范围：•机器人
2.7V至10.8V
说明
DRV8833为玩具、打印机及其他机电一体化应用提供了一款双通道桥式电机驱动器解决方案。 该器件具有两个H桥驱动器，并能够驱动两个直流(DC)电刷电机、一个双极性步进电机、螺线管或其他电感性负载。
每个H桥的输出驱动器模块由N沟道功率MOSFET组成，这些MOSFET被配置成一个H桥，以驱动电机绕组。每个H桥都包括用于调节或限制绕组电流的电路。
借助正确的PCB设计，DRV8833的每个H桥能够连续提供高达1.5-A RMS（或DC）的驱动电流（在25℃和采用一个5V VM电源时）。每个H桥可支持高达2A的峰值电流。在较低的VM电压条件下，电流供应能力略有下降。
该器件提供了利用一个故障输出引脚实现的内部关断功能，用于：过流保护、短路保护、欠压闭锁和过热。另外，还提供了一种低功耗睡眠模式。
DRV8833内置于16引脚HTSSOP封装或采用PowerPAD™的QFN封装（绿环保：RoHS和无Sb/Br）。
订购信息(1)
可订购部件正面
封装(2)
号标记
2000卷带式包装DRV8833PWPR
PowerPAD™(HTSSOP)-PWP DRV8833
Tube of90DRV8833PWP
3000卷带DRV8833RTYR
PowerPAD™(QFN)-RTY DRV8833
卷盘（250片）DRV8833RTYT
(1)如需了解最新的封装及订购信息，敬请查看本文档末的“封装选项附录”，或查看TI网站。
(2)封装图样、散热数据和符号可登录/packaging获取。
Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
DRV8833
ZHCS016B–JANUARY2011–REVISED
DEVICE INFORMATION
Functional Block Diagram
DRV8833 ZHCS016B–JANUARY2011–REVISED AUGUST2011
Table1.TERMINAL FUNCTIONS
PIN PIN EXTERNAL COMPONENTS NAME I/O(1)DESCRIPTION
(PWP)(RTY)OR CONNECTIONS
POWER AND GROUND
Both the GND pin and device 1311
GND-Device ground PowerPAD must be connected to PPAD PPAD
ground
Connect to motor supply.A10-µF
VM1210-Device power supply(minimum)ceramic bypass capacitor to
GND is recommended.
Bypass to GND with2.2-μF,6.3-V
VINT1412-Internal supply bypass
capacitor
Connect a0.01-μF,16-V(minimum) VCP119IO High-side gate drive voltage
X7R ceramic capacitor to VM CONTROL
Logic input controls state of AOUT1.
AIN11614I Bridge A input1
Internal pulldown.
Logic input controls state of AOUT2.
AIN21513I Bridge A input2
Internal pulldown.
Logic input controls state of BOUT1.
BIN197I Bridge B input1
Internal pulldown.
Logic input controls state of BOUT2.
BIN2108I Bridge B input2
Internal pulldown.
Logic high to enable device,logic low to nSLEEP115I Sleep mode input enter low-power sleep mode and reset
all internal logic.Internal pulldown. STATUS
Logic low when in fault condition nFAULT86OD Fault output
(overtemp,overcurrent)
OUTPUT
Connect to current sense resistor for AISEN31IO Bridge A ground/Isense bridge A,or GND if current control not
needed
Connect to current sense resistor for BISEN64IO Bridge B ground/Isense bridge B,or GND if current control not
needed
AOUT1216O Bridge A output1
Connect to motor winding A
AOUT242O Bridge A output2
BOUT175O Bridge B output1
Connect to motor winding B
BOUT253O Bridge B output2
文具盒生产过程
(1)Directions:I=input,O=output,OZ=tri-state output,OD=open-drain output,IO=input/output
AIN1
AIN2
VINT
GND
VM
VCP
BIN2
BIN1
BOUT1
nFAULT
BOUT2
BISEN
AISEN
AOUT2
AOUT1
nSLEEP
PWP PACKAGE
(TOP VIEW)
A
O
U
T
1
n
S
L
电机风叶
E
E
P
A
I
N
1
A
I
N
2
双面斜纹布
VINT
GND
VM
VCP
B
I
N
1
B
I
N
2
B
O
U
T
1
n
F
A
U
L
T
BOUT2
BISEN
AOUT2
AISEN
RTY PACKAGE
纸币清分机(TOP VIEW)
DRV8833
ZHCS016B–JANUARY2011–REVISED
DRV8833 ZHCS016B–JANUARY2011–REVISED AUGUST2011
ABSOLUTE MAXIMUM RATINGS(1)(2)
VALUE UNIT
VM Power supply voltage range–0.3to11.8V Digital input pin voltage range–0.5to7V
xISEN pin voltage–0.3to0.5V
Peak motor drive output current Internally limited A
T J Operating junction temperature range–40to150°C
T stg Storage temperature range–60to150°C (1)Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.These are stress ratings
only,and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2)All voltage values are with respect to network ground terminal.
THERMAL INFORMATION
PWP RTY
THERMAL METRIC UNITS
16PINS16PINS
生物教具制作
θJA Junction-to-ambient thermal resistance(1)40.537.2
θJCtop Junction-to-case(top)thermal resistance(2)32.934.3
θJB Junction-to-board thermal resistance(3)28.815.3
°C/W
ψJT Junction-to-top characterization parameter(4)0.60.3
ψJB Junction-to-board characterization parameter(5)11.515.4
θJCbot Junction-to-case(bottom)thermal resistance(6) 4.8 3.5
(1)The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard,high-K board,as
specified in JESD51-7,in an environment described in JESD51-2a.
(2)The junction-to-case(top)thermal resistance is obtained by simulating a cold plate test on the package top.No specific
JEDEC-standard test exists,but a close description can be found in the ANSI SEMI standard G30-88.
(3)The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature,as described in JESD51-8.
(4)The junction-to-top characterization parameter,ψJT,estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtainingθJA,using a procedure described in JESD51-2a(sections6and7).
(5)The junction-to-board characterization parameter,ψJB,estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtainingθJA,using a procedure described in JESD51-2a(sections6and7).
(6)The junction-to-case(bottom)thermal resistance is obtained by simulating a cold plate test on the exposed(power)pad.No specific
JEDEC standard test exists,but a close description can be found in the ANSI SEMI standard G30-88.
RECOMMENDED OPERATING CONDITIONS
T A=25°C(unless otherwise noted)
MIN NOM MAX UNIT
V M Motor power supply voltage range(1) 2.710.8V
V DIGIN Digital input pin voltage range-0.3 5.75V
I OUT Continuous RMS or DC output current per bridge(2) 1.5A
(1)Note that R DS(ON)increases and maximum output current is reduced at VM supply voltages belo
w5V.
(2)V M=5V,power dissipation and thermal limits must be observed.
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