密级无
分类号O484
硕士学位论文
作者：***
指导教师：杭凌侠教授
申请学位学科：光学工程
2018年5月21日
XI’AN TECHNOLOGICAL UNIVERSITY
题目:
SiO x N y光学薄膜折射率渐变特性研究
学科：光学工程
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摘要
SiO x N y是一种重要的光学薄膜材料，其折射率变化范围是1.46~1.97，介于二氧化硅及氮化硅薄膜的折射率之间。SiO x N y材料广泛应用于光学薄膜的制备。 本文研究了SiO x N y薄膜中x，y变化与折射率之间的关系，获得折射率与N、O元素含量之间的关系；通过实验探究了SiO x N y渐变折射率薄膜界面“消失”的评判标准；根据SiO x N y薄膜x，y变化与折射率之间的规律，结合PECVD技术，对非线性SiO x N y薄膜的制备工艺进行了探究。得到如下研究结果：
（1）根据MS软件对SiO x N y材料仿真计算，结果表明：随着O元素含量的增加，SiO x N y薄膜的折射率逐渐降低；随着N元素含量的增加，SiO x N y薄膜的折射率逐渐增加，SiO x N y薄膜的折射率在1.46~1.97之间变化。采用PECVD技术进行实验验证，结果表明：SiO x N y薄膜折射率的工艺实验与理论仿真实验变化趋势一致。
（2）SiO x N y渐变折射率薄膜界面“消失”的评判标准取决于工程应用对象的制造精度，采用PECVD技术制备薄膜的Δn不大于0.003。
（3）采用梯度法和坡度法对非线性渐变折射率薄膜的制备工艺进行了探索。实验结果表明，采用连续变换反应气体比例方法制备坡度渐变折射率薄膜工艺是可行的，薄膜透过率与设计曲线的吻合度取决于气体比例切换点的选择。薄膜的透过率曲线随梯度层数的增加而增加，透过波段也有所展宽。
关键词：SiO x N y；光学薄膜；PECVD；渐变折射率
Study on the Refractive Index Gradient Characteristics of SiO x N y
Optical Thin-film
Discipline:Optical Engineering
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Abstract
SiO x N y thin-film as an important optical material.The range of refractive index is 1.46~1.97,which is between the refractive index of silicon dioxide and silicon nitride film,SiO x N y material is widely used in the field of optical subtraction film,SiO x N y material is widely used in the preparation of reflective and filter thin-film.
In this paper,the relationship between SiO x N y thin-film x,y change and refractive index was studied through MS software simulation analysis,and the relationship between the refractive index and N and O element content was obtained theoretically.Through the experiment,the evaluation criteria of the"disappearance"of SiO x N y gradient refractive index film interface were investigated.According to the law of SiO x N y thin-film x,y change and refractive index,PECVD technology was used to explore the manufacturing process of nonlinear SiO x N y thin-film.
The results are as follows:
（1）According to MS software simulation calculation of SiO x N y material,the results show that the r
efractive index of SiO x N y thin-film gradually decreases with the increase of O element content.The refractive index of SiO x N y thin-film increases gradually with the increase of N element content.When the refractive index of SiO x N y thin-film changes between1.46and 1.97.PECVD technique is adopted to improve the experimental verification,the results show that the refractive index of SiO x N y thin-film is consistent with the experimental results of theoretical simulation.
（2）The evaluation criterion of"disappearance"of the interface of SiO x N y gradient refractive index film depends on the manufacturing precision of the engineering application, and the△n of the film prepared by PECVD technology is less than0.003.
（3）The preparation technology of refractive index gradient films was investigated by gradient method and gradient method.The experimental results show that,continuous
conversion reaction gas ratio method could be used to make gradient refractive index film.The coincidence degree of thin-film transmission rate and design curve depends on the selection of the gas proportion switching point.The transmittance curve of the thin-film is increased with the increase of the number of gradient layers,and the transmission band is also broadened. Key words：SiO x N y;Optical Thin-film;PECVD;Gradient Refractive Index
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