发明人：中山 威久，太和田 善久，田井 雅彦，生地 望申请号：JP特願昭59-137547
申请日：19840702
公开号：JP特公平7-19751B2
公开日：
19950306
专利内容由知识产权出版社提供
摘要：PURPOSE:To make the velocity for forming semiconductor films of the right and left same easily by operating electric elements such as capacitors or coils connected to the separated electrodes. CONSTITUTION:RF electrodes 1a and 1b are two metallic plates arranged in parallel through an insulating film 2 interlaid and capacitors 6a and 6b are connected to the respective metallic plate in the outside of a reactor. The high frequency wave RF supplied from the electrodes 1a and 1b is divided into two through a matching circuit M and is supplied to the capacitor 6a and 6b. On both sides of the electrodes 1a and 1b, ground electrodes 3a and 3b are arranged in parallel to the plane of the RF electrodes and substrates 4a and 4b are placed on said electrodes 3a and 3b. Thus the electrodes 1a and 1b are electrically divided into two and the capacitors 6a and 6b are connected to the electrodes 1a and 1b in series respectively, thereby enabling the film formation on both sides of the electrodes 1a and 1b. If the velocity for forming films differs in the right and left, the velocity can be adjusted arbitrarily by changing a capacity of the capacitor 6a.
申请人：鐘淵化学工業株式会社，株式会社島津製作所
地址：大阪府大阪市北区中之島3丁目2番4号，京都府京都市中京区河原町通二条下ル一ノ船入町378番地
国籍：JP,JP
代理人：朝日奈 宗太
豫公网安备41160202000603
站长QQ:729038198
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