MJD47/50 — NPN Epitaxial Silicon Transistor
MJD47/50 — NPN Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi
Electrical Characteristics T a = 25°C unless otherwise noted
* Pulse Test: PW ≤300μs, Duty Cycle ≤2%
Symbol
Parameter Test Condition Min.
Max.Units
V CEO (sus)
* Collector-Emitter Sustaining Voltage
: MJD47: MJD50 I C = 30mA, I B = 0
I C = 30mA, I B = 0250400
V V
I CEO
Collector Cut-off Current
: MJD47: MJD50
V CE = 150V, I B = 0 V CE = 300V, I B = 00.20.2mA mA I CES
Collector Cut-off Current
美工刀片
: MJD47: MJD50
V CE = 350, V EB = 0 V CE = 500, V EB = 00.10.1mA mA I EBO
Emitter Cut-off Current V BE = 5V, I C = 0 1
mA
h FE
* DC Current Gain
V CE = 10V, I C = 0.3A V CE = 10V, I C = 1A 30 10
150 V CE (sat)* Collector-Emitter Saturation Voltage I C = 1A, I B = 0.2A 1V V BE (sat)* Base-Emitter Saturation Voltage V CE = 10A, I C = 1A 1.5
V f T
Current Gain Bandwidth Product
V CE =10V, I C = 0.2A
10
MHz
MJD47/50 — NPN Epitaxial Silicon Transistor
MJD47/50 — NPN Epitaxial Silicon Transistor
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change
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