JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT4401 TRANSISTOR (NPN) FEATURES z Switching Transistor MARKING:2X MAXIMUM RATINGS (T
a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter
Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage
V (BR)CBO I C =100µA, I E =0 60 V Collector-emitter breakdown voltage
V (BR)CEO I C =1mA, I B =
0 40 V Emitter-base breakdown voltage
V (BR)EBO I E =100µA, I C =
0 6 V Collector cut-off current
I CEO V CE =30V, I B =
0 100 nA Collector cut-off current
I CBO V CB = 50V, I E =
0 100 nA Emitter cut-off current
I EBO V EB =5V, I C =0 100 nA DC current gain
贴片
三极管h FE V CE =1V, I C =150mA 100 300 Collector-emitter saturation voltage
V CE(sat) I C =150mA, I B =
15mA 0.4 V Collector-emitter saturation voltage
烟盒工艺品
V BE(sat) I C =150mA, I B =15mA 0.95 V Transition frequency 鹤嘴锤
f T V CE =10V,I C =20mA, f=100MHz 250 MHz Delay time
t d 15 ns Rise time
t r V CC =30V, V BE(off)=-2V I C =150mA, I B1=15mA 20 ns Storage time
t s 225 ns Fall time t f
V CC =30V, I C =150mA, I B1= I B2=15mA 30 ns
Symbol Parameter Value Unit V CBO
Collector-Base Voltage 60 V V CEO
Collector-Emitter Voltage 40 V V EBO
Emitter-Base Voltage 6 V I C
Collector Current 600 mA P C
Collector Power Dissipation 300 mW R ΘJA
Thermal Resistance From Junction To Ambient 417 ℃/W T j
Junction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ C,Aug,2012
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B A S E -E M I T T E R S A T U R A T I O N V
O
L T
钨杆A捕虾笼
G E
V B
E s
a t
(m V
)
AMBIENT TEMPERATURE T a ()
℃ MMBT4401
Typical Characteristics I h —— REVERSE VOLTAGE V (V)C
A P A C I T A N C E C (p
F ) C
O L L E C T O R C U R R E N T I C
(m A )Static Characteristic C O L L E C T O R C U R R E N T I C
(m A )
投票箱制作
C,Aug,2012
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