MMBT1616A贴片三极管规格书

A,Oct,2012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBT1616A TRANSISTOR (NPN) FEATURES

z Audio frequency power amplifier z Medium speed switching

MARKING:16A MAXIMUM RATINGS (T

户外投影灯a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter

Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage

V (BR)CBO I C =10µA, I E =0 120 V Collector-emitter breakdown voltage

V (BR)CEO I C =2mA, I B =0 60 V Emitter-base breakdown voltage

V (BR)EBO I E =10µA, I C =0 6 V Collector cut-off current一氧化氮合成酶

I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current

I EBO V EB =6V, I C =0 100 nA h FE(1) V CE =2V, I C =100mA 135 600 DC current gain

h FE(2) V CE =2V, I C =1A 81 Collector-emitter saturation voltage

V CE(sat) I C =1A, I B =50mA 0.3 V Collector-emitter saturation voltage

V BE(sat) I C =1A, I B =50mA 1.2 V Base-emitter voltage

V BE V CE =2V, I C =50mA 0.6 0.7 V Transition frequency

f T V CE =2V,I C =100mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 19 pF CLASSIFICATION OF h FE(1)

RANK Y G L RANGE 135~270 200~400 300~600

贴片三极管Symbol Parameter Value Unit V CBO

Collector-Base Voltage 120 V V CEO

超市手推车广告Collector-Emitter Voltage 60 V V EBO

Emitter-Base Voltage 6 V I C

Collector Current 1 A P C

Collector Power Dissipation 750 mW R ΘJA

Thermal Resistance From Junction To Ambient 167 ℃/W T j

Junction Temperature 150 ℃ T stg Storage Temperature -55～+150℃ www.nscn 【南京南山半导体有限公司 — 长电贴片三极管选型资料】

www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】

The bottom gasket

The top gasket

3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box

with the tape Seal the box

with the tape Stamp “EMPTY”

quartz插件on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm

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